Method of making a semiconductor light-emitting device utilizing low-temperature vapor-phase deposition

Patent · Tue Feb 12 00:00:00 EST 1980

OSTI ID:5806756

Inoue, M; Itoh, K

In order to decrease threshold current of a semiconductor laser, and to obtain a single mode lasing suitable for use in light communication, the semiconductor laser is formed in stripe type in which the light-emitting (i.e., active) layer and neighboring layers are formed in mesa-etched stripe type and low impurity concentration (i.e., high resistivity) layers of GaAs, GaAsP or GaAlAs are situated to contact the mesa-etched side faces of the stripe-shaped part on the semiconductor device by vapor phase growth, vacuum deposition, sputtering, or molecular beam deposition. Since the wafer temperature can be kept fairly low (e.g., 400 to 700/sup 0/C) in comparison with that (about 950/sup 0/C) in a liquid phase growth, the stress introduced during the deposition is smaller than that in a liquid phase growth.

• Assignee: Matsushita Electric Industrial Co Ltd (Japan)
• Patent Number(s): US 4188244
• OSTI ID: 5806756
• Resource Relation: Patent Priority Date: Priority date 10 Apr 1975, Japan; Other Information: PAT-APPL-947419
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
GALLIUM ARSENIDES
LAYERS
SPUTTERING
THRESHOLD CURRENT
VACUUM COATING
VAPOR DEPOSITED COATINGS
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
CURRENTS
DEPOSITION
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SURFACE COATING
420300* - Engineering- Lasers- (-1989)