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Title: Proton damage effects on light emitting diodes

Abstract

We have studied the effects of 16-MeV proton irradiation on the performance of a variety of light emitting diodes (LED's) emitting between 820 and 1300 nm. Total light output and current were measured at room temperature as a function of forward bias prior to and following a sequence of room temperature 16-MeV proton irradiations. Our results indicate that the relative amount of proton-induced degradation from one LED type to another is similar to that observed for neutron and gamma irradiations. More specifically, the most sensitive device is the amphoterically Si-doped GaAs LED which is characterized by a long preirradiation minority carrier lifetime. The most resistant LEDs are the high radiance GaAlAs (820 nm) and InGaAsP (1300 nm) LEDs. As in the case of Si devices, the degradation rate per irradiating particle fluence is significantly greater for proton irradiation of these LEDs than it is for neutron exposure. Neutron damage data presented herein indicate that the ratio of proton-to-neutron degradation rates can be as high as 100. Lifetime-damage constant products for constant current operation are calculated for each LED type and vary from 1.5 x 10/sup -13/ cm/sup 2//p for the InGaAsP LED to 1.1 x 10/sup -10/ cm/sup 2//p formore » the amphoterically Si-doped GaAs LED.« less

Authors:
;
Publication Date:
Research Org.:
Sandia National Laboratories, Albuquerque, New Mexico 87185
OSTI Identifier:
5806565
Resource Type:
Journal Article
Journal Name:
J. Appl. Phys.; (United States)
Additional Journal Information:
Journal Volume: 53:3
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; LIGHT EMITTING DIODES; DAMAGE; ALUMINIUM ARSENIDES; COMPARATIVE EVALUATIONS; DATA; DOPED MATERIALS; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; GAMMA RADIATION; INDIUM ARSENIDES; IRRADIATION; LIFETIME; MATHEMATICAL MODELS; MEDIUM TEMPERATURE; MEV RANGE; NEUTRONS; PERFORMANCE; PROTONS; WAVELENGTHS; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; BARYONS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; GALLIUM COMPOUNDS; HADRONS; INDIUM COMPOUNDS; INFORMATION; IONIZING RADIATIONS; MATERIALS; NUCLEONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; 420800* - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats

Rose, B H, and Barnes, C E. Proton damage effects on light emitting diodes. United States: N. p., 1982. Web. doi:10.1063/1.331649.
Rose, B H, & Barnes, C E. Proton damage effects on light emitting diodes. United States. doi:10.1063/1.331649.
Rose, B H, and Barnes, C E. Mon . "Proton damage effects on light emitting diodes". United States. doi:10.1063/1.331649.
@article{osti_5806565,
title = {Proton damage effects on light emitting diodes},
author = {Rose, B H and Barnes, C E},
abstractNote = {We have studied the effects of 16-MeV proton irradiation on the performance of a variety of light emitting diodes (LED's) emitting between 820 and 1300 nm. Total light output and current were measured at room temperature as a function of forward bias prior to and following a sequence of room temperature 16-MeV proton irradiations. Our results indicate that the relative amount of proton-induced degradation from one LED type to another is similar to that observed for neutron and gamma irradiations. More specifically, the most sensitive device is the amphoterically Si-doped GaAs LED which is characterized by a long preirradiation minority carrier lifetime. The most resistant LEDs are the high radiance GaAlAs (820 nm) and InGaAsP (1300 nm) LEDs. As in the case of Si devices, the degradation rate per irradiating particle fluence is significantly greater for proton irradiation of these LEDs than it is for neutron exposure. Neutron damage data presented herein indicate that the ratio of proton-to-neutron degradation rates can be as high as 100. Lifetime-damage constant products for constant current operation are calculated for each LED type and vary from 1.5 x 10/sup -13/ cm/sup 2//p for the InGaAsP LED to 1.1 x 10/sup -10/ cm/sup 2//p for the amphoterically Si-doped GaAs LED.},
doi = {10.1063/1.331649},
journal = {J. Appl. Phys.; (United States)},
number = ,
volume = 53:3,
place = {United States},
year = {1982},
month = {3}
}