Raman scattering studies of ion beam induced mixing at the amorphous germanium/crystalline silicon interface

Journal Article · Mon Dec 14 00:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98279· OSTI ID:5796586

Kshirsagar, S T; Rajarshi, S V; Dusane, R O; Vaidya, J; Bhide, V G

Thin layers of amorphous germanium vacuum deposited onto a <111> surface of crystalline silicon were irradiated with a Kr/sup +/ ion beam to produce an amorphous Si-Ge alloy at the interface. Raman scattering measurements were performed on these films both before and after the ion irradiation. The vanishing of the strong Si-Si lattice mode near 521 cm/sup -1/ and an appearance of the localized Si-Ge vibrational mode near 375 cm/sup -1/ in the Raman spectra of ion-irradiated films are correlated to the formation of an amorphous alloy of probable composition of Si/sub 0.2/Ge/sub 0.8/ at the interface.

• Research Organization: National Chemical Laboratory, Pune-411 008, India
• OSTI ID: 5796586
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 51:24
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GERMANIUM
PHYSICAL RADIATION EFFECTS
SILICON
AMORPHOUS STATE
CHEMICAL COMPOSITION
GERMANIUM ALLOYS
INTERFACES
ION COLLISIONS
KRYPTON IONS
RAMAN SPECTROSCOPY
SILICON ALLOYS
THIN FILMS
ALLOYS
CHARGED PARTICLES
COLLISIONS
ELEMENTS
FILMS
IONS
LASER SPECTROSCOPY
METALS
RADIATION EFFECTS
SEMIMETALS
SPECTROSCOPY
360605* - Materials- Radiation Effects