Structural properties of low temperature silicon oxide films prepared by remote plasma-enhanced chemical vapor deposition

Journal Article · Fri Oct 01 00:00:00 EDT 1993 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2220949· OSTI ID:5784650

Ortiz, A; Alonso, J C ^[1]; Falcony, C ^[2]; Farias, M H; Cota-Araiza, L; Soto, G ^[3]

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1. Inst. de Investigaciones en Materiales, Coyoacan (Mexico)
2. CINVESTAV-IPN, Mexico City (Mexico). Dept. de Fisica
3. Inst. de Fisica, Baja California (Mexico). Lab. de Ensenada

High structural quality silicon dioxide films have been prepared by the remote plasma-enhanced chemical vapor deposition technique using silicon tetrachloride and oxygen as source materials, at substrate temperature lower than 200 C. In addition to the source gases, hydrogen was fed into the deposition chamber. The role of the H[sub 2] gas is to react with the chlorine from the SiCl[sub 4] decomposition forming HCl vapor which is removed from the deposition chamber. The role variations in the substrate temperature, plasma power and oxygen, hydrogen, silicon tetrachloride, and argon flow rates have on the oxide quality are analyzed. The samples were characterized by IR spectroscopy, ellipsometry, chemical etch rate, and Auger electron spectroscopy (AES) measurements. Silicon dioxide films of suitable quality have been prepared at substrate temperatures as low as 50 C. Samples prepared at this temperature with low deposition rates show good structural characteristics, such as refractive index, chemical etch rate, and composition near to that of the stoichiometric oxide.

• OSTI ID: 5784650
• Journal Information: Journal of the Electrochemical Society; (United States), Vol. 140:10; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON OXIDES
CHEMICAL VAPOR DEPOSITION
CHEMICAL COMPOSITION
ETCHING
EXPERIMENTAL DATA
HYDROGEN
REFRACTIVE INDEX
SILICON CHLORIDES
VAPOR DEPOSITED COATINGS
CHALCOGENIDES
CHEMICAL COATING
CHLORIDES
CHLORINE COMPOUNDS
COATINGS
DATA
DEPOSITION
ELEMENTS
HALIDES
HALOGEN COMPOUNDS
INFORMATION
NONMETALS
NUMERICAL DATA
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SILICON COMPOUNDS
SILICON HALIDES
SURFACE COATING
SURFACE FINISHING
360601* - Other Materials- Preparation & Manufacture