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Title: Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

Abstract

Amorphous silicon Schottky barrier solar cells are disclosed which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, I.E., Schottky barrier devices, and rectifying junction metal insulating silicon devices, I.E., mis devices.

Inventors:
Publication Date:
OSTI Identifier:
5779736
Patent Number(s):
US 4200473
Assignee:
RCA Corp
Resource Type:
Patent
Resource Relation:
Patent File Date: Filed date 12 Mar 1979
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; DESIGN; LAYERS; MIS TRANSISTORS; SCHOTTKY BARRIER DIODES; THERMAL INSULATION; DIRECT ENERGY CONVERTERS; EQUIPMENT; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SOLAR CELLS; SOLAR EQUIPMENT; TRANSISTORS; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Carlson, D E. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer. United States: N. p., 1980. Web.
Carlson, D E. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer. United States.
Carlson, D E. 1980. "Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer". United States.
@article{osti_5779736,
title = {Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer},
author = {Carlson, D E},
abstractNote = {Amorphous silicon Schottky barrier solar cells are disclosed which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, I.E., Schottky barrier devices, and rectifying junction metal insulating silicon devices, I.E., mis devices.},
doi = {},
url = {https://www.osti.gov/biblio/5779736}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {4}
}