Radiation induced defects in CVD-grown 3C-SiC
Abstract
Radiation induced defects in 3C-SiC epitaxially grown by chemical vapor deposition method were studied with electron spin resonance (ESR) technique. A fifteen-line ESR spectrum was observed in 2 MeV proton and 1 MeV electron irradiated 3C-SiC when the magnetic field was applied parallel to the {l angle}100{r angle} axis. This spectrum labeled T1, which has an isotropic g-value of 2.0029 {plus minus} 0.0001, is interpreted by simultaneous hyperfine interactions of a paramagnetic electron with surrounding {sup 13}C at four carbon sits and {sup 29}Si at twelve silicon sites. It indicates that the T1 spectrum arises from a point defect at a silicon site. The observed hyperfine interactions with neighboring {sup 13}C and {sup 29}Si nuclei are discussed in terms of a simple molecular-orbital treatment of the defect.
- Authors:
-
- Japan Atomic Energy Research Inst., 1233 Watanuki, Takasaki, Gunma 370-12 (JP)
- Electrotechnical Lab., 1-1-4 Umezono, Tsukuba, Ibaraki (JP)
- Publication Date:
- OSTI Identifier:
- 5776191
- Report Number(s):
- CONF-900723-
Journal ID: ISSN 0018-9499; CODEN: IETNA; TRN: 91-014189
- Resource Type:
- Conference
- Journal Name:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
- Additional Journal Information:
- Journal Volume: 37:6; Conference: 27. IEEE annual conference on nuclear and space radiation effects, Reno, NV (USA), 16-20 Jul 1990; Journal ID: ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; SILICON CARBIDES; PHYSICAL RADIATION EFFECTS; CARBON 13; CHEMICAL VAPOR DEPOSITION; ELECTRON SPIN RESONANCE; ELECTRONS; EPITAXY; G VALUE; ISOTROPY; MEV RANGE 01-10; POINT DEFECTS; PROTONS; SILICON 29; BARYONS; CARBIDES; CARBON COMPOUNDS; CARBON ISOTOPES; CHEMICAL COATING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DEPOSITION; ELEMENTARY PARTICLES; ENERGY RANGE; EVEN-ODD NUCLEI; FERMIONS; HADRONS; ISOTOPES; LEPTONS; LIGHT NUCLEI; MAGNETIC RESONANCE; MEV RANGE; NUCLEI; NUCLEONS; RADIATION EFFECTS; RESONANCE; SILICON COMPOUNDS; SILICON ISOTOPES; STABLE ISOTOPES; SURFACE COATING; 360605* - Materials- Radiation Effects
Citation Formats
Itoh, H, Yoshikawa, M, Nashiyama, I, Misawa, S, Okumura, H, and Yoshida, S. Radiation induced defects in CVD-grown 3C-SiC. United States: N. p., 1990.
Web.
Itoh, H, Yoshikawa, M, Nashiyama, I, Misawa, S, Okumura, H, & Yoshida, S. Radiation induced defects in CVD-grown 3C-SiC. United States.
Itoh, H, Yoshikawa, M, Nashiyama, I, Misawa, S, Okumura, H, and Yoshida, S. 1990.
"Radiation induced defects in CVD-grown 3C-SiC". United States.
@article{osti_5776191,
title = {Radiation induced defects in CVD-grown 3C-SiC},
author = {Itoh, H and Yoshikawa, M and Nashiyama, I and Misawa, S and Okumura, H and Yoshida, S},
abstractNote = {Radiation induced defects in 3C-SiC epitaxially grown by chemical vapor deposition method were studied with electron spin resonance (ESR) technique. A fifteen-line ESR spectrum was observed in 2 MeV proton and 1 MeV electron irradiated 3C-SiC when the magnetic field was applied parallel to the {l angle}100{r angle} axis. This spectrum labeled T1, which has an isotropic g-value of 2.0029 {plus minus} 0.0001, is interpreted by simultaneous hyperfine interactions of a paramagnetic electron with surrounding {sup 13}C at four carbon sits and {sup 29}Si at twelve silicon sites. It indicates that the T1 spectrum arises from a point defect at a silicon site. The observed hyperfine interactions with neighboring {sup 13}C and {sup 29}Si nuclei are discussed in terms of a simple molecular-orbital treatment of the defect.},
doi = {},
url = {https://www.osti.gov/biblio/5776191},
journal = {IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)},
issn = {0018-9499},
number = ,
volume = 37:6,
place = {United States},
year = {Sat Dec 01 00:00:00 EST 1990},
month = {Sat Dec 01 00:00:00 EST 1990}
}