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Title: Radiation testing of the CMOS 8085 microprocessor family

Conference ·
OSTI ID:5766018

Radiation testing of the SA3000 family, CMOS versions of the Intel 8085 microprocessor family, has demonstrated full functionality after 3 x 10/sup 6/ rad (Si) total dose. Static supply currents measured after reset increased from approximately 50 etaA to 500 ..mu..A at V/sub DD/ = 10V while maximum operating frequency decreased from greater than 10 MHz to 4 MHz at V/sub DD/ = 9V post 3 x 10/sup 6/ rad (Si). Output drive currents decreased 25% post 1 x 10/sup 6/ rad (Si) and 40% post 3 x 10/sup 6/ rad (Si). The nominal threshold voltage shift of discrete transistors measured under worst-case bias (n-channels, ON; p-channels, OFF) shifted -0.5 volts and -2.40 volts post 1 x 10/sup 6/ rad (Si) for n-channel and p-channel MOSFETs, respectively. Transient radiation upset levels of about 1 x 10/sup 9/ rad (Si)/sec have been measured for parts from this family. Latch-up immunity has been demonstrated up to 1 x 10/sup 12/ rad (Si)/sec and electrical bench tests are discussed which prove this technology is immune to latch-up. The technology used for the SA3000 family is a 3..mu..m silicon gate process fabricated in n and n+ epitaxial silicon. Functional test programs for each chip of the family are discussed.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5766018
Report Number(s):
SAND-83-0615C; CONF-830714-13; ON: DE83014604
Resource Relation:
Conference: 20. IEEE annual conference on nuclear and space radiation effects, Gatlinburg, TN, USA, 18 Jul 1983
Country of Publication:
United States
Language:
English