Properties of TiO/sub 2/ and SiO/sub 2/ thin films deposited using ion assisted deposition

Journal Article · Fri Feb 15 00:00:00 EST 1985 · Appl. Opt.; (United States)

DOI:https://doi.org/10.1364/AO.24.000486· OSTI ID:5760067

McNeil, J R; Al-Jumaily, G A; Jungling, K C; Barron, A C

TiO/sub 2/ and SiO/sub 2/ films deposited using ion assisted deposition are investigated as a function of ion energy and current density. Optical constants, possible ion source contaminants, and optical scatter are examined for samples deposited at ambient (approx.75/sup 0/C) and elevated (approx.250/sup 0/C) substrate temperatures.

• Research Organization: University of New Mexico, Department of Electrical Engineering, Albuquerque, New Mexico 87131
• OSTI ID: 5760067
• Journal Information: Appl. Opt.; (United States), Vol. 24:4
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
SILICON OXIDES
IMPURITIES
OPTICAL PROPERTIES
TITANIUM OXIDES
CURRENT DENSITY
ENERGY BEAM DEPOSITION
ENERGY DEPENDENCE
ION BEAMS
MODIFICATIONS
PRESSURE DEPENDENCE
QUANTITY RATIO
TEMPERATURE DEPENDENCE
THIN FILMS
VACUUM EVAPORATION
BEAMS
CHALCOGENIDES
DEPOSITION
EVAPORATION
FILMS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
SILICON COMPOUNDS
SURFACE COATING
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
640301* - Atomic
Molecular & Chemical Physics- Beams & their Reactions