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Title: Growth and characterization of In{sub 0.2}Ga{sub 0.8}Sb device structures using metalorganic vapor phase epitaxy

Abstract

In{sub 0.2}Ga{sub 0.8}Sb epitaxial layers and thermophotovoltaic (TPV) device structures have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE). Control of the n-type doping up to 1{times}10{sup 18}cm{sup {minus}3} was achieved using diethyltellurium (DETe) as the dopant source. A Hall mobility of greater than 8000cm{sup 2}/Vs at 77K was obtained for a 3{times}10{sup 17}cm{sup {minus}3} doped In{sub 0.2}Ga{sub 0.8}Sb layer grown on high-resistivity GaSb substrate. The In{sub 0.2}Ga{sub 0.8}Sb epilayers directly grown on GaSb substrates were tilted with respect to the substrates, with the amount of tilt increasing with the layer thickness. Transmission electron microscopy (TEM) studies of the layers showed the presence of dislocation networks across the epilayers parallel to the interface at different distances from the interface, but the layers above this dislocation network were virtually free of dislocations. A strong correlation between epilayer tilt and TPV device properties was found, with layers having more tilt providing better devices. The results suggest that the dislocations moving parallel to the interface cause lattice tilt, and control of this layer tilt may enable the fabrication of better quality device structures. {copyright} {ital 1997 American Institute of Physics.}

Authors:
; ; ;  [1]; ;  [2]
  1. Department of Electrical, Computer and Systems Engineering, Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, New York 12180-3590 (United States)
  2. Lockheed Martin Inc., Schenectady, New York 12301-1072 (United States)
Publication Date:
OSTI Identifier:
575618
Report Number(s):
CONF-9705119-
Journal ID: APCPCS; ISSN 0094-243X; TRN: 98:002723
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 401; Journal Issue: 1; Conference: 3. NREL conference on thermophotovoltaic (TPV) generation of electricity, Colorado Springs, CO (United States), 18-21 May 1997; Other Information: PBD: Mar 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 30 DIRECT ENERGY CONVERSION; THERMOPHOTOVOLTAIC CONVERTERS; FABRICATION; INDIUM ANTIMONIDES; VAPOR PHASE EPITAXY; GALLIUM ANTIMONIDES; CRYSTAL DOPING; DISLOCATIONS; CARRIER DENSITY; CARRIER MOBILITY

Citation Formats

Ehsani, H, Bhat, I, Hitchcock, C, Gutmann, R, Charache, G, and Freeman, M. Growth and characterization of In{sub 0.2}Ga{sub 0.8}Sb device structures using metalorganic vapor phase epitaxy. United States: N. p., 1997. Web.
Ehsani, H, Bhat, I, Hitchcock, C, Gutmann, R, Charache, G, & Freeman, M. Growth and characterization of In{sub 0.2}Ga{sub 0.8}Sb device structures using metalorganic vapor phase epitaxy. United States.
Ehsani, H, Bhat, I, Hitchcock, C, Gutmann, R, Charache, G, and Freeman, M. 1997. "Growth and characterization of In{sub 0.2}Ga{sub 0.8}Sb device structures using metalorganic vapor phase epitaxy". United States.
@article{osti_575618,
title = {Growth and characterization of In{sub 0.2}Ga{sub 0.8}Sb device structures using metalorganic vapor phase epitaxy},
author = {Ehsani, H and Bhat, I and Hitchcock, C and Gutmann, R and Charache, G and Freeman, M},
abstractNote = {In{sub 0.2}Ga{sub 0.8}Sb epitaxial layers and thermophotovoltaic (TPV) device structures have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE). Control of the n-type doping up to 1{times}10{sup 18}cm{sup {minus}3} was achieved using diethyltellurium (DETe) as the dopant source. A Hall mobility of greater than 8000cm{sup 2}/Vs at 77K was obtained for a 3{times}10{sup 17}cm{sup {minus}3} doped In{sub 0.2}Ga{sub 0.8}Sb layer grown on high-resistivity GaSb substrate. The In{sub 0.2}Ga{sub 0.8}Sb epilayers directly grown on GaSb substrates were tilted with respect to the substrates, with the amount of tilt increasing with the layer thickness. Transmission electron microscopy (TEM) studies of the layers showed the presence of dislocation networks across the epilayers parallel to the interface at different distances from the interface, but the layers above this dislocation network were virtually free of dislocations. A strong correlation between epilayer tilt and TPV device properties was found, with layers having more tilt providing better devices. The results suggest that the dislocations moving parallel to the interface cause lattice tilt, and control of this layer tilt may enable the fabrication of better quality device structures. {copyright} {ital 1997 American Institute of Physics.}},
doi = {},
url = {https://www.osti.gov/biblio/575618}, journal = {AIP Conference Proceedings},
number = 1,
volume = 401,
place = {United States},
year = {Sat Mar 01 00:00:00 EST 1997},
month = {Sat Mar 01 00:00:00 EST 1997}
}