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Title: Unbalanced magnetron ion-assisted deposition and property modification of thin films

Abstract

Unbalanced magnetron (UM-gun) sputtering sources with the unique characteristic of a high deposition rate and concomitant high ion flux represent an exciting new development in ion-assisted deposition of thin films. We have used a UM-gun capable of producing ion current densities up to 5 mA cm/sup -2/ (ion flux 3 x 10/sup 16/ cm/sup -2/ s/sup -1/) when operated at a power of 500 W to produce a variety of thin films of amorphous and crystalline materials by varying both the bombarding ion energy in the range 2--100 eV and the ion/atom arrival rate ratio in the range 0.4--10. The great flexibility and usefulness of UM-guns is demonstrated with examples which include (a) hard diamondlike a-C films prepared under very low ion energy (13--16 eV) bombardment which possess a metastable bonding configuration consisting of a mixture of tetrahedral and trigonal coordination that varies with ion energy, (b) hard and wear-resistant TiN films whose electrical and optical properties change dramatically with ion bombardment, and (c) Ni/Cr alloy films showing ion-induced structural modifications.

Authors:
;
Publication Date:
Research Org.:
CSIRO Division of Applied Physics, Sydney, Australia 2070
OSTI Identifier:
5753369
Resource Type:
Journal Article
Journal Name:
J. Vac. Sci. Technol., A; (United States)
Additional Journal Information:
Journal Volume: 4:3
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; THIN FILMS; DEPOSITION; ION BEAMS; SPUTTERING; BEAMS; FILMS; 360605* - Materials- Radiation Effects; 360602 - Other Materials- Structure & Phase Studies; 360206 - Ceramics, Cermets, & Refractories- Radiation Effects

Citation Formats

Savvides, N, and Window, B. Unbalanced magnetron ion-assisted deposition and property modification of thin films. United States: N. p., 1986. Web. doi:10.1116/1.573869.
Savvides, N, & Window, B. Unbalanced magnetron ion-assisted deposition and property modification of thin films. United States. https://doi.org/10.1116/1.573869
Savvides, N, and Window, B. 1986. "Unbalanced magnetron ion-assisted deposition and property modification of thin films". United States. https://doi.org/10.1116/1.573869.
@article{osti_5753369,
title = {Unbalanced magnetron ion-assisted deposition and property modification of thin films},
author = {Savvides, N and Window, B},
abstractNote = {Unbalanced magnetron (UM-gun) sputtering sources with the unique characteristic of a high deposition rate and concomitant high ion flux represent an exciting new development in ion-assisted deposition of thin films. We have used a UM-gun capable of producing ion current densities up to 5 mA cm/sup -2/ (ion flux 3 x 10/sup 16/ cm/sup -2/ s/sup -1/) when operated at a power of 500 W to produce a variety of thin films of amorphous and crystalline materials by varying both the bombarding ion energy in the range 2--100 eV and the ion/atom arrival rate ratio in the range 0.4--10. The great flexibility and usefulness of UM-guns is demonstrated with examples which include (a) hard diamondlike a-C films prepared under very low ion energy (13--16 eV) bombardment which possess a metastable bonding configuration consisting of a mixture of tetrahedral and trigonal coordination that varies with ion energy, (b) hard and wear-resistant TiN films whose electrical and optical properties change dramatically with ion bombardment, and (c) Ni/Cr alloy films showing ion-induced structural modifications.},
doi = {10.1116/1.573869},
url = {https://www.osti.gov/biblio/5753369}, journal = {J. Vac. Sci. Technol., A; (United States)},
number = ,
volume = 4:3,
place = {United States},
year = {Thu May 01 00:00:00 EDT 1986},
month = {Thu May 01 00:00:00 EDT 1986}
}