Unbalanced magnetron ion-assisted deposition and property modification of thin films
Abstract
Unbalanced magnetron (UM-gun) sputtering sources with the unique characteristic of a high deposition rate and concomitant high ion flux represent an exciting new development in ion-assisted deposition of thin films. We have used a UM-gun capable of producing ion current densities up to 5 mA cm/sup -2/ (ion flux 3 x 10/sup 16/ cm/sup -2/ s/sup -1/) when operated at a power of 500 W to produce a variety of thin films of amorphous and crystalline materials by varying both the bombarding ion energy in the range 2--100 eV and the ion/atom arrival rate ratio in the range 0.4--10. The great flexibility and usefulness of UM-guns is demonstrated with examples which include (a) hard diamondlike a-C films prepared under very low ion energy (13--16 eV) bombardment which possess a metastable bonding configuration consisting of a mixture of tetrahedral and trigonal coordination that varies with ion energy, (b) hard and wear-resistant TiN films whose electrical and optical properties change dramatically with ion bombardment, and (c) Ni/Cr alloy films showing ion-induced structural modifications.
- Authors:
- Publication Date:
- Research Org.:
- CSIRO Division of Applied Physics, Sydney, Australia 2070
- OSTI Identifier:
- 5753369
- Resource Type:
- Journal Article
- Journal Name:
- J. Vac. Sci. Technol., A; (United States)
- Additional Journal Information:
- Journal Volume: 4:3
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; THIN FILMS; DEPOSITION; ION BEAMS; SPUTTERING; BEAMS; FILMS; 360605* - Materials- Radiation Effects; 360602 - Other Materials- Structure & Phase Studies; 360206 - Ceramics, Cermets, & Refractories- Radiation Effects
Citation Formats
Savvides, N, and Window, B. Unbalanced magnetron ion-assisted deposition and property modification of thin films. United States: N. p., 1986.
Web. doi:10.1116/1.573869.
Savvides, N, & Window, B. Unbalanced magnetron ion-assisted deposition and property modification of thin films. United States. https://doi.org/10.1116/1.573869
Savvides, N, and Window, B. 1986.
"Unbalanced magnetron ion-assisted deposition and property modification of thin films". United States. https://doi.org/10.1116/1.573869.
@article{osti_5753369,
title = {Unbalanced magnetron ion-assisted deposition and property modification of thin films},
author = {Savvides, N and Window, B},
abstractNote = {Unbalanced magnetron (UM-gun) sputtering sources with the unique characteristic of a high deposition rate and concomitant high ion flux represent an exciting new development in ion-assisted deposition of thin films. We have used a UM-gun capable of producing ion current densities up to 5 mA cm/sup -2/ (ion flux 3 x 10/sup 16/ cm/sup -2/ s/sup -1/) when operated at a power of 500 W to produce a variety of thin films of amorphous and crystalline materials by varying both the bombarding ion energy in the range 2--100 eV and the ion/atom arrival rate ratio in the range 0.4--10. The great flexibility and usefulness of UM-guns is demonstrated with examples which include (a) hard diamondlike a-C films prepared under very low ion energy (13--16 eV) bombardment which possess a metastable bonding configuration consisting of a mixture of tetrahedral and trigonal coordination that varies with ion energy, (b) hard and wear-resistant TiN films whose electrical and optical properties change dramatically with ion bombardment, and (c) Ni/Cr alloy films showing ion-induced structural modifications.},
doi = {10.1116/1.573869},
url = {https://www.osti.gov/biblio/5753369},
journal = {J. Vac. Sci. Technol., A; (United States)},
number = ,
volume = 4:3,
place = {United States},
year = {Thu May 01 00:00:00 EDT 1986},
month = {Thu May 01 00:00:00 EDT 1986}
}