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Title: Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in silicon

Abstract

The formation of supersaturated substitutional alloys by ion implantation and rapid liquid-phase-epitaxial regrowth induced by pulsed laser annealing has been studied using Rutherford backscattering, ion channeling analysis. Group-III (Ga, In) and group-V (As, Sb, Bi) dopants have been implanted into single-crystal silicon at doses ranging from 1 x 10/sup 15/ to 1 x 10/sup 17//cm/sup 2/. The samples were annealed with a Q-switched ruby laser (energy density approx.1.5 J/cm/sup 2/, pulse duration approx.15 x 10/sup -9/ sec). Ion channeling analysis shows that laser annealing incorporates these dopants into substitutional lattice sites at concentrations far in excess of the equilibrium solid solubility. Channeling measurements indicate the silicon crystal is essentially defect free after laser annealing. Also values for the maximum dopant concentration (C/sup max//sub s/) that can be incorporated into substitutional lattice sites are determined for our annealing conditions. Dopant profiles determined by Rutherford backscattering are compared to model calculations which incorporate both dopant diffusion in liquid silicon and a distribution coefficient from the liquid. It is necessary to assume an interfacial distribution coefficient (k') far greater than the equilibrium value k/sub 0/ to fit the experimental data. The relationship of C/sup max//sub s/ and k' to the formation of thesemore » supersaturated alloys is discussed.« less

Authors:
; ; ;
Publication Date:
Research Org.:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
OSTI Identifier:
5748287
Resource Type:
Journal Article
Journal Name:
J. Appl. Phys.; (United States)
Additional Journal Information:
Journal Volume: 51:1
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; ION IMPLANTATION; SILICON; CRYSTAL DOPING; ANNEALING; BACKSCATTERING; CRYSTAL LATTICES; DATA; DOPED MATERIALS; EPITAXY; LASER-RADIATION HEATING; MONOCRYSTALS; PULSES; Q-SWITCHING; QUANTITY RATIO; RUBY LASERS; RUTHERFORD SCATTERING; CRYSTAL STRUCTURE; CRYSTALS; ELASTIC SCATTERING; ELEMENTS; HEAT TREATMENTS; HEATING; INFORMATION; LASERS; PLASMA HEATING; SCATTERING; SEMIMETALS; SOLID STATE LASERS; 360101* - Metals & Alloys- Preparation & Fabrication

Citation Formats

White, C W, Wilson, S R, Appleton, B R, and Young, Jr, F W. Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in silicon. United States: N. p., 1980. Web. doi:10.1063/1.327334.
White, C W, Wilson, S R, Appleton, B R, & Young, Jr, F W. Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in silicon. United States. doi:10.1063/1.327334.
White, C W, Wilson, S R, Appleton, B R, and Young, Jr, F W. Tue . "Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in silicon". United States. doi:10.1063/1.327334.
@article{osti_5748287,
title = {Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in silicon},
author = {White, C W and Wilson, S R and Appleton, B R and Young, Jr, F W},
abstractNote = {The formation of supersaturated substitutional alloys by ion implantation and rapid liquid-phase-epitaxial regrowth induced by pulsed laser annealing has been studied using Rutherford backscattering, ion channeling analysis. Group-III (Ga, In) and group-V (As, Sb, Bi) dopants have been implanted into single-crystal silicon at doses ranging from 1 x 10/sup 15/ to 1 x 10/sup 17//cm/sup 2/. The samples were annealed with a Q-switched ruby laser (energy density approx.1.5 J/cm/sup 2/, pulse duration approx.15 x 10/sup -9/ sec). Ion channeling analysis shows that laser annealing incorporates these dopants into substitutional lattice sites at concentrations far in excess of the equilibrium solid solubility. Channeling measurements indicate the silicon crystal is essentially defect free after laser annealing. Also values for the maximum dopant concentration (C/sup max//sub s/) that can be incorporated into substitutional lattice sites are determined for our annealing conditions. Dopant profiles determined by Rutherford backscattering are compared to model calculations which incorporate both dopant diffusion in liquid silicon and a distribution coefficient from the liquid. It is necessary to assume an interfacial distribution coefficient (k') far greater than the equilibrium value k/sub 0/ to fit the experimental data. The relationship of C/sup max//sub s/ and k' to the formation of these supersaturated alloys is discussed.},
doi = {10.1063/1.327334},
journal = {J. Appl. Phys.; (United States)},
number = ,
volume = 51:1,
place = {United States},
year = {1980},
month = {1}
}