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Title: Crystal-field splitting and charge flow in the buckled-dimer reconstruction of Si(100)2 times 1

Abstract

The effect of the 2{times}1 reconstruction on the core-electron binding energies of the outermost Si(100) layers has been determined using high-resolution photoemission data. A previously unobserved 190-meV crystal-field splitting is resolved for the up-atoms of the asymmetric surface dimers, whose average core-level shift is {minus}400 meV. The signal from the down-atoms is clearly identified and has a shift of +220 meV. These new findings indicate a charge flow of {similar to}0.05{ital e} from the subsurface to the surface layers, with a substantially larger difference of {similar to}0.34{ital e} between the up-atoms and down-atoms in the dimer.

Authors:
; ; ;  [1]
  1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (US)
Publication Date:
OSTI Identifier:
5748112
DOE Contract Number:  
AC02-76CH00016
Resource Type:
Journal Article
Journal Name:
Physical Review Letters; (USA)
Additional Journal Information:
Journal Volume: 67:1; Journal ID: ISSN 0031-9007
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; CRYSTAL FIELD; SURFACE PROPERTIES; DIMERS; L-S COUPLING; LINE WIDTHS; LOW TEMPERATURE; PHOTOEMISSION; SYNCHROTRON RADIATION; BREMSSTRAHLUNG; COUPLING; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; INTERMEDIATE COUPLING; RADIATIONS; SECONDARY EMISSION; SEMIMETALS; 360603* - Materials- Properties

Citation Formats

Wertheim, G K, Riffe, D M, Rowe, J E, and Citrin, P H. Crystal-field splitting and charge flow in the buckled-dimer reconstruction of Si(100)2 times 1. United States: N. p., 1991. Web. doi:10.1103/PhysRevLett.67.120.
Wertheim, G K, Riffe, D M, Rowe, J E, & Citrin, P H. Crystal-field splitting and charge flow in the buckled-dimer reconstruction of Si(100)2 times 1. United States. doi:10.1103/PhysRevLett.67.120.
Wertheim, G K, Riffe, D M, Rowe, J E, and Citrin, P H. Mon . "Crystal-field splitting and charge flow in the buckled-dimer reconstruction of Si(100)2 times 1". United States. doi:10.1103/PhysRevLett.67.120.
@article{osti_5748112,
title = {Crystal-field splitting and charge flow in the buckled-dimer reconstruction of Si(100)2 times 1},
author = {Wertheim, G K and Riffe, D M and Rowe, J E and Citrin, P H},
abstractNote = {The effect of the 2{times}1 reconstruction on the core-electron binding energies of the outermost Si(100) layers has been determined using high-resolution photoemission data. A previously unobserved 190-meV crystal-field splitting is resolved for the up-atoms of the asymmetric surface dimers, whose average core-level shift is {minus}400 meV. The signal from the down-atoms is clearly identified and has a shift of +220 meV. These new findings indicate a charge flow of {similar to}0.05{ital e} from the subsurface to the surface layers, with a substantially larger difference of {similar to}0.34{ital e} between the up-atoms and down-atoms in the dimer.},
doi = {10.1103/PhysRevLett.67.120},
journal = {Physical Review Letters; (USA)},
issn = {0031-9007},
number = ,
volume = 67:1,
place = {United States},
year = {1991},
month = {7}
}