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Title: Annealing behavior of photoconductance relating to electron-irradiation-induced defects in semi-insulating GaAs

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.349693· OSTI ID:5747775
; ;  [1];  [2]
  1. College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan (JP)
  2. Research Reactor Institute, Kyoto University, Kumatori, Osaka 590-04, (Japan)

The annealing behavior of photoconductance in electron-irradiated semi-insulating GaAs grown by the magnetic-applied liquid-encapsulated Czochralski technique is studied in terms of the electron-irradiation-induced defects. A decrease in photoconductance for samples annealed at 350 {degree}C is attributed to the interband transition of the photoexcited electrons within the electron-irradiation-induced defect observed at around 0.98 eV using infrared absorption spectroscopy. The recovery of the photoconductance for samples annealed above 400 {degree}C is enhanced by the annihilation of the 0.98-eV defect, accompanied by the photoquenching of the photoconductance below 140 K. An unquenchable component in photoconductance appeared by an annealing above 600 {degree}C is proposed to be a ital V{sub As}-ital C{sub As} complex by photoluminescence measurements.

OSTI ID:
5747775
Journal Information:
Journal of Applied Physics; (USA), Vol. 70:2, Issue 2; ISSN 0021-8979
Country of Publication:
United States
Language:
English