Annealing behavior of photoconductance relating to electron-irradiation-induced defects in semi-insulating GaAs
- College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan (JP)
- Research Reactor Institute, Kyoto University, Kumatori, Osaka 590-04, (Japan)
The annealing behavior of photoconductance in electron-irradiated semi-insulating GaAs grown by the magnetic-applied liquid-encapsulated Czochralski technique is studied in terms of the electron-irradiation-induced defects. A decrease in photoconductance for samples annealed at 350 {degree}C is attributed to the interband transition of the photoexcited electrons within the electron-irradiation-induced defect observed at around 0.98 eV using infrared absorption spectroscopy. The recovery of the photoconductance for samples annealed above 400 {degree}C is enhanced by the annihilation of the 0.98-eV defect, accompanied by the photoquenching of the photoconductance below 140 K. An unquenchable component in photoconductance appeared by an annealing above 600 {degree}C is proposed to be a ital V{sub As}-ital C{sub As} complex by photoluminescence measurements.
- OSTI ID:
- 5747775
- Journal Information:
- Journal of Applied Physics; (USA), Vol. 70:2, Issue 2; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
PHYSICAL RADIATION EFFECTS
ABSORPTION SPECTROSCOPY
ANNEALING
CRYSTAL DEFECTS
CZOCHRALSKI METHOD
ELECTRON COLLISIONS
INFRARED SPECTRA
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
ARSENIC COMPOUNDS
ARSENIDES
COLLISIONS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
GALLIUM COMPOUNDS
HEAT TREATMENTS
LUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
RADIATION EFFECTS
SPECTRA
SPECTROSCOPY
360605* - Materials- Radiation Effects