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Title: Polyacetylene, (CH)/sub x/, as an emerging material for solar cell applications. Technical progress report, April-June, 1979

Technical Report ·
DOI:https://doi.org/10.2172/5747373· OSTI ID:5747373

The potential of (CH)/sub x/ as a photosensitive material for use in solar cell applications is studied. Schottky barrier photovoltaic cells were fabricated with metallic AsF/sub 5/-doped (CH)/sub x/ on semiconducting n-Si and n-GaAs, with metallic Na-doped (CH)/sub x/ on semiconducting p-Si, with K-doped (CH)/sub x/ as an n-type semiconductor in contact with an electronegative metal (Au), and with undoped trans-(CH)/sub x/ as a p-type semiconductor in contact with electropositive metals (Na, Hg, In and Sn). The variation of barrier heights in metallic AsF/sub 5/-, PF/sub 5/-, and BF/sub 3/-doped (CH)/sub x/ in contact with n-type semiconducting Si was studied. p-n heterojunction solar cells were fabricated with undoped (CH)/sub x/ on ZnS. Open circuit photovoltage was 0.8 V; short circuit current was limited by series resistance. The agreement in spectral response obtained from photoconductivity and photovoltaic effect has shown that the carriers are produced in the (CH)/sub x/ and that the band gap is indeed approx. 1.5 eV. Trapping effects have been identified. Work on the construction of a (CH)/sub x/ field effect transistor is progressing. This device will be used to obtain the majority carrier mobility. (WHK)

Research Organization:
Univ. of Pennsylvania, Philadelphia, PA (United States)
DOE Contract Number:
AC04-79ET23002
OSTI ID:
5747373
Report Number(s):
DOE/ET/23002-T2
Country of Publication:
United States
Language:
English