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Title: Method of making a Josephson junction with a diamond-like carbon insulating barrier

Abstract

This patent describes a method of making a Josephson junction. It comprises depositing upon a substrate a first layer of high-temperature superconductive oxide having a critical temperature above 23 K.; depositing on the first layer to a thickness in excess of 200 angstroms an insulating layer of diamond-like carbon resistant to cation diffusion therethrough and incapable of interdiffusing with superconductive oxides of the junction; plasma etching the insulating layer to leave the insulating layer with a thickness of 20 to 100 angstroms on the first layer; to leave a continuous film thereof on the first layer of a thickness of 20 to 100 angstroms; and depositing on the insulating layer a second layer of high-temperature superconductive oxide having a critical temperature above 23 K. and forming with the first layer and the insulating layer a Josephson junction at a temperature at least equal to one of the critical temperatures.

Inventors:
Publication Date:
OSTI Identifier:
5746661
Patent Number(s):
US 5064809; A
Application Number:
PPN: US 7-290178
Assignee:
Troy Investments, Inc., Nashua, NH (United States)
Resource Type:
Patent
Resource Relation:
Patent File Date: 23 Dec 1988
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; HIGH-TC SUPERCONDUCTORS; CRITICAL TEMPERATURE; JOSEPHSON JUNCTIONS; FABRICATION; OXIDES; SUPERCONDUCTIVITY; ETCHING; LAYERS; SOLID-STATE PLASMA; SUBSTRATES; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; JUNCTIONS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PLASMA; SUPERCONDUCTING JUNCTIONS; SUPERCONDUCTORS; SURFACE FINISHING; THERMODYNAMIC PROPERTIES; TRANSITION TEMPERATURE; 665412* - Superconducting Devices- (1992-); 665411 - Basic Superconductivity Studies- (1992-); 360207 - Ceramics, Cermets, & Refractories- Superconducting Properties- (1992-)

Citation Formats

Hed, A Z. Method of making a Josephson junction with a diamond-like carbon insulating barrier. United States: N. p., 1991. Web.
Hed, A Z. Method of making a Josephson junction with a diamond-like carbon insulating barrier. United States.
Hed, A Z. Tue . "Method of making a Josephson junction with a diamond-like carbon insulating barrier". United States.
@article{osti_5746661,
title = {Method of making a Josephson junction with a diamond-like carbon insulating barrier},
author = {Hed, A Z},
abstractNote = {This patent describes a method of making a Josephson junction. It comprises depositing upon a substrate a first layer of high-temperature superconductive oxide having a critical temperature above 23 K.; depositing on the first layer to a thickness in excess of 200 angstroms an insulating layer of diamond-like carbon resistant to cation diffusion therethrough and incapable of interdiffusing with superconductive oxides of the junction; plasma etching the insulating layer to leave the insulating layer with a thickness of 20 to 100 angstroms on the first layer; to leave a continuous film thereof on the first layer of a thickness of 20 to 100 angstroms; and depositing on the insulating layer a second layer of high-temperature superconductive oxide having a critical temperature above 23 K. and forming with the first layer and the insulating layer a Josephson junction at a temperature at least equal to one of the critical temperatures.},
doi = {},
url = {https://www.osti.gov/biblio/5746661}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {11}
}