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Title: Method of making a Josephson junction with a diamond-like carbon insulating barrier

Patent ·
OSTI ID:5746661

This patent describes a method of making a Josephson junction. It comprises depositing upon a substrate a first layer of high-temperature superconductive oxide having a critical temperature above 23 K.; depositing on the first layer to a thickness in excess of 200 angstroms an insulating layer of diamond-like carbon resistant to cation diffusion therethrough and incapable of interdiffusing with superconductive oxides of the junction; plasma etching the insulating layer to leave the insulating layer with a thickness of 20 to 100 angstroms on the first layer; to leave a continuous film thereof on the first layer of a thickness of 20 to 100 angstroms; and depositing on the insulating layer a second layer of high-temperature superconductive oxide having a critical temperature above 23 K. and forming with the first layer and the insulating layer a Josephson junction at a temperature at least equal to one of the critical temperatures.

Assignee:
Troy Investments, Inc., Nashua, NH (United States)
Patent Number(s):
US 5064809; A
Application Number:
PPN: US 7-290178
OSTI ID:
5746661
Resource Relation:
Patent File Date: 23 Dec 1988
Country of Publication:
United States
Language:
English