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Title: Thin film properties of sputtered niobium silicide on SiO/sub 2/, Si/sub 3/N/sub 4/, and N/sup +/ poly-Si

Journal Article · · J. Electrochem. Soc.; (United States)
OSTI ID:5743201

Thin film properties of niobium silicide sputtered from a slightly silicon-rich (Si/Nb approx. = 2.3), cold-pressed alloy target onto SiO/sub 2/, Si/sub 3/N/sub 4/, and n doped poly-Si have been investigated. The structural and compositional properties were examined with x-ray diffraction, Rutherford backscattering spectrometry (RBS), and secondary ion mass spectrometry (SIMS). X-ray diffraction revealed that NbSi/sub 2/ was the predominant silicide phase present, unlike those films reported previously, which contained significant amounts of an intermediate silicide phase (Nb/sub 5/Si/sub 3/). These films had a SiNb ratio of 2.1 as determined from RBS and contained lower levels of common contaminants (such as N/sub 2/, O/sub 2/, and carbon). Isochronal and isothermal annealing showed that the major decrease in resistivity occurred in the first 5 min, and a resistivity value of approx. =70 ..mu cap omega..-cm was obtained after annealing at 1000/sup 0/C. During annealing, phosphorus was found to diffuse through NbSi/sub 2/ rapidly, similar to other refractory silicides.

Research Organization:
General Electric Co., Corporate Research and Development, Schenectady, NY 12301
OSTI ID:
5743201
Journal Information:
J. Electrochem. Soc.; (United States), Vol. 133:1
Country of Publication:
United States
Language:
English