Improved transient ionizing-radiation survivability of n-channel power MOSFETs
Abstract
Substantial improvements have been made in the fabrication of medium-power, n-channel MOSFETs permitting operation at dose rates up to 1 x 10/sup 12/ rad(Si)/s. The physical mechanisms responsible for power MOSFET burnout are discussed along with the fabrication techniques used in the improved designs.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Labs., Albuquerque, NM (USA); MA/COM PHI, Inc., Torrance, CA (USA); Siliconix, Inc., Santa Clara, CA (USA)
- OSTI Identifier:
- 5737042
- Report Number(s):
- SAND-86-0448C; CONF-860706-11
ON: DE86007700
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Conference
- Resource Relation:
- Conference: 23. annual conference on nuclear and space radiation effects, Providence, RI, USA, 20 Jul 1986; Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 42 ENGINEERING; MOSFET; PHYSICAL RADIATION EFFECTS; DESIGN; FABRICATION; PHOTOCURRENTS; SILICON; CURRENTS; ELECTRIC CURRENTS; ELEMENTS; FIELD EFFECT TRANSISTORS; MOS TRANSISTORS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems; 420800 - Engineering- Electronic Circuits & Devices- (-1989)
Citation Formats
Dawes, Jr, W R, Fischer, T A, Huang, C C.C., Meyer, W J, Smith, C S, Blanchard, R A, and Fortier, T J. Improved transient ionizing-radiation survivability of n-channel power MOSFETs. United States: N. p., 1986.
Web.
Dawes, Jr, W R, Fischer, T A, Huang, C C.C., Meyer, W J, Smith, C S, Blanchard, R A, & Fortier, T J. Improved transient ionizing-radiation survivability of n-channel power MOSFETs. United States.
Dawes, Jr, W R, Fischer, T A, Huang, C C.C., Meyer, W J, Smith, C S, Blanchard, R A, and Fortier, T J. 1986.
"Improved transient ionizing-radiation survivability of n-channel power MOSFETs". United States.
@article{osti_5737042,
title = {Improved transient ionizing-radiation survivability of n-channel power MOSFETs},
author = {Dawes, Jr, W R and Fischer, T A and Huang, C C.C. and Meyer, W J and Smith, C S and Blanchard, R A and Fortier, T J},
abstractNote = {Substantial improvements have been made in the fabrication of medium-power, n-channel MOSFETs permitting operation at dose rates up to 1 x 10/sup 12/ rad(Si)/s. The physical mechanisms responsible for power MOSFET burnout are discussed along with the fabrication techniques used in the improved designs.},
doi = {},
url = {https://www.osti.gov/biblio/5737042},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1986},
month = {Wed Jan 01 00:00:00 EST 1986}
}
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