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Title: Improved transient ionizing-radiation survivability of n-channel power MOSFETs

Abstract

Substantial improvements have been made in the fabrication of medium-power, n-channel MOSFETs permitting operation at dose rates up to 1 x 10/sup 12/ rad(Si)/s. The physical mechanisms responsible for power MOSFET burnout are discussed along with the fabrication techniques used in the improved designs.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (USA); MA/COM PHI, Inc., Torrance, CA (USA); Siliconix, Inc., Santa Clara, CA (USA)
OSTI Identifier:
5737042
Report Number(s):
SAND-86-0448C; CONF-860706-11
ON: DE86007700
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Conference
Resource Relation:
Conference: 23. annual conference on nuclear and space radiation effects, Providence, RI, USA, 20 Jul 1986; Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 42 ENGINEERING; MOSFET; PHYSICAL RADIATION EFFECTS; DESIGN; FABRICATION; PHOTOCURRENTS; SILICON; CURRENTS; ELECTRIC CURRENTS; ELEMENTS; FIELD EFFECT TRANSISTORS; MOS TRANSISTORS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems; 420800 - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats

Dawes, Jr, W R, Fischer, T A, Huang, C C.C., Meyer, W J, Smith, C S, Blanchard, R A, and Fortier, T J. Improved transient ionizing-radiation survivability of n-channel power MOSFETs. United States: N. p., 1986. Web.
Dawes, Jr, W R, Fischer, T A, Huang, C C.C., Meyer, W J, Smith, C S, Blanchard, R A, & Fortier, T J. Improved transient ionizing-radiation survivability of n-channel power MOSFETs. United States.
Dawes, Jr, W R, Fischer, T A, Huang, C C.C., Meyer, W J, Smith, C S, Blanchard, R A, and Fortier, T J. 1986. "Improved transient ionizing-radiation survivability of n-channel power MOSFETs". United States.
@article{osti_5737042,
title = {Improved transient ionizing-radiation survivability of n-channel power MOSFETs},
author = {Dawes, Jr, W R and Fischer, T A and Huang, C C.C. and Meyer, W J and Smith, C S and Blanchard, R A and Fortier, T J},
abstractNote = {Substantial improvements have been made in the fabrication of medium-power, n-channel MOSFETs permitting operation at dose rates up to 1 x 10/sup 12/ rad(Si)/s. The physical mechanisms responsible for power MOSFET burnout are discussed along with the fabrication techniques used in the improved designs.},
doi = {},
url = {https://www.osti.gov/biblio/5737042}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1986},
month = {Wed Jan 01 00:00:00 EST 1986}
}

Conference:
Other availability
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