(Thermodynamics, kinetics, and interfare morphologies of phase formation reactions between metals and gallium arsenide: Bulk vs thin-film studies)

Technical Report · Sun Jan 01 00:00:00 EST 1989

OSTI ID:5737003

Chang, Y A

During the past two years or so, we have been carrying out the following studies: (i) investigation of the thermodynamic stabilities of selected GaAs/M couples by determining the Ga-M-As phase diagrams at one temperature in the composition region of importance to the metallization of GaAs and (ii) determination of the kinetics and morphologies of reactions between GaAs and M for both bulk and thin-film cases. The metallic elements which have been studied are Pd, Pt, Ir, Rh, Nb, Co and Ni. In the following, we will summarize briefly our accomplishments. 27 refs.

• Research Organization: Wisconsin Univ., Madison, WI (USA)
• DOE Contract Number: FG02-86ER45274
• OSTI ID: 5737003
• Report Number(s): DOE/ER/45274-3; ON: DE89016469
• Resource Relation: Other Information: Portions of this document are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PHASE STUDIES
COBALT ARSENIDES
DIFFUSION
ELECTRICAL PROPERTIES
IRIDIUM COMPOUNDS
NICKEL ARSENIDES
NIOBIUM ARSENIDES
PALLADIUM ARSENIDES
PLATINUM ARSENIDES
PROGRESS REPORT
RHODIUM COMPOUNDS
SCHOTTKY BARRIER DIODES
THERMODYNAMICS
THIN FILMS
ARSENIC COMPOUNDS
ARSENIDES
COBALT COMPOUNDS
DOCUMENT TYPES
FILMS
GALLIUM COMPOUNDS
NICKEL COMPOUNDS
NIOBIUM COMPOUNDS
PALLADIUM COMPOUNDS
PHYSICAL PROPERTIES
PLATINUM COMPOUNDS
PNICTIDES
REFRACTORY METAL COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TRANSITION ELEMENT COMPOUNDS
360602* - Other Materials- Structure & Phase Studies
360603 - Materials- Properties