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Title: (Thermodynamics, kinetics, and interfare morphologies of phase formation reactions between metals and gallium arsenide: Bulk vs thin-film studies)

Abstract

During the past two years or so, we have been carrying out the following studies: (i) investigation of the thermodynamic stabilities of selected GaAs/M couples by determining the Ga-M-As phase diagrams at one temperature in the composition region of importance to the metallization of GaAs and (ii) determination of the kinetics and morphologies of reactions between GaAs and M for both bulk and thin-film cases. The metallic elements which have been studied are Pd, Pt, Ir, Rh, Nb, Co and Ni. In the following, we will summarize briefly our accomplishments. 27 refs.

Authors:
Publication Date:
Research Org.:
Wisconsin Univ., Madison, WI (USA)
OSTI Identifier:
5737003
Report Number(s):
DOE/ER/45274-3
ON: DE89016469
DOE Contract Number:  
FG02-86ER45274
Resource Type:
Technical Report
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; PHASE STUDIES; COBALT ARSENIDES; DIFFUSION; ELECTRICAL PROPERTIES; IRIDIUM COMPOUNDS; NICKEL ARSENIDES; NIOBIUM ARSENIDES; PALLADIUM ARSENIDES; PLATINUM ARSENIDES; PROGRESS REPORT; RHODIUM COMPOUNDS; SCHOTTKY BARRIER DIODES; THERMODYNAMICS; THIN FILMS; ARSENIC COMPOUNDS; ARSENIDES; COBALT COMPOUNDS; DOCUMENT TYPES; FILMS; GALLIUM COMPOUNDS; NICKEL COMPOUNDS; NIOBIUM COMPOUNDS; PALLADIUM COMPOUNDS; PHYSICAL PROPERTIES; PLATINUM COMPOUNDS; PNICTIDES; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TRANSITION ELEMENT COMPOUNDS; 360602* - Other Materials- Structure & Phase Studies; 360603 - Materials- Properties

Citation Formats

Chang, Y.A. (Thermodynamics, kinetics, and interfare morphologies of phase formation reactions between metals and gallium arsenide: Bulk vs thin-film studies). United States: N. p., 1989. Web.
Chang, Y.A. (Thermodynamics, kinetics, and interfare morphologies of phase formation reactions between metals and gallium arsenide: Bulk vs thin-film studies). United States.
Chang, Y.A. Sun . "(Thermodynamics, kinetics, and interfare morphologies of phase formation reactions between metals and gallium arsenide: Bulk vs thin-film studies)". United States.
@article{osti_5737003,
title = {(Thermodynamics, kinetics, and interfare morphologies of phase formation reactions between metals and gallium arsenide: Bulk vs thin-film studies)},
author = {Chang, Y.A.},
abstractNote = {During the past two years or so, we have been carrying out the following studies: (i) investigation of the thermodynamic stabilities of selected GaAs/M couples by determining the Ga-M-As phase diagrams at one temperature in the composition region of importance to the metallization of GaAs and (ii) determination of the kinetics and morphologies of reactions between GaAs and M for both bulk and thin-film cases. The metallic elements which have been studied are Pd, Pt, Ir, Rh, Nb, Co and Ni. In the following, we will summarize briefly our accomplishments. 27 refs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {1}
}

Technical Report:
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