Near-ideal low threshold behavior in (111) oriented GaAs/AlGaAs quantum well lasers

Journal Article · Mon Feb 01 00:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99457· OSTI ID:5733899

Hayakawa, T; Suyama, T; Takahashi, K; Kondo, M; Yamamoto, S; Hijikata, T

Fundamental characteristics of (111) oriented GaAs/AlGaAs graded-index separate-confinement-heterostructure single quantum well lasers have been compared with conventional (100) oriented lasers. In particular, the threshold current density J/sub th/ of (111) oriented lasers does not change with the well width L/sub z/ in the range of L/sub z/ = 30--100 A, which corresponds to an ideal extreme. The lowest J/sub th/ of 145 A/cm/sup 2/ together with a high characteristic temperature T/sub 0/ of 186 K in the threshold-temperature dependence has been achieved for an L/sub z/ of 40 A and a cavity length of 490 ..mu..m. The dependence of T/sub 0/ on L/sub z/ showed that T/sub 0/ is maximum at L/sub z/approx.60 A for both (111) and (100) oriented lasers.

• Research Organization: Central Research Laboratories, Sharp Corporation, Tenri, Nara 632, Japan
• OSTI ID: 5733899
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 52:5
• Country of Publication: United States
• Language: English

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42 ENGINEERING
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
ALUMINIUM ARSENIDES
CURRENT DENSITY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
HETEROJUNCTIONS
OPERATION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
INFORMATION
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LASERS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
420300* - Engineering- Lasers- (-1989)