Charge collection within well-defined microstructures induced by the nuclear interaction of high-energy protons
Protons and heavy ions were each used to generate charges (electron-hole pairs) within or nearby the sensitive volumes of different microelectronic test structures. Charge collection was measured in fully depleted (Surface Barrier Detectors-YAG444 photodiode) as well as partially depleted (N/sup -/, N/sup -/ + N/sup +/ GaAs Fat FET and UV100, YAG444 photodiodes) in junctions. The proton data were used to test the predictions of the CUPID code for fully and partially depleted devices. Enhanced charge collection at the edges of MESFET gates in GaAs were studied for different LET particles. A nearly linear relationship was found between the charge collection and the LET of the incident ions. The linear relationship is significant because it supports the assumption that one thickness can be used for the sensitive volume over a range of LET values. The effect of the surrounding material on charge generation within a well-defined volume was studied and founded to be small, for the dimensions studied.
- Research Organization:
- Clarkson Univ., Potsdam, NY (USA)
- OSTI ID:
- 5731223
- Resource Relation:
- Other Information: Thesis (Ph.D)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
JUNCTION DETECTORS
CHARGE COLLECTION
MICROELECTRONICS
PHOTODIODES
PHYSICAL RADIATION EFFECTS
HEAVY IONS
ION BEAMS
LET
MICROSTRUCTURE
PROTON BEAMS
BEAMS
CHARGED PARTICLES
CRYSTAL STRUCTURE
ENERGY TRANSFER
IONS
MEASURING INSTRUMENTS
NUCLEON BEAMS
PARTICLE BEAMS
RADIATION DETECTORS
RADIATION EFFECTS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments
440200 - Radiation Effects on Instrument Components
Instruments
or Electronic Systems