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Title: Profiling and mapping of advanced materials using spatially resolved Raman spectroscopy

Conference ·
OSTI ID:5718896

We have developed a technique to profile important physical and chemical properties of materials based upon simultaneous acquisition of Raman spectra along a laser illumination line, coupled with extensive and rapid spectral analysis to extract the desired information. The technique uses a two-dimensional spectroscopic detector and, in contrast to Hadamard techniques, sample movement in one dimension that allows all collected light to be detected. Property maps comprised of the analysis results of more than 10,000 Raman spectra can be built up from successive profiles in a few hours. In order to increase efficiency, the data for one profile are analyzed while the data for the next profile are collected. Two recent applications are discussed: measuring spatial variations in crystalline quality in CVD-grown diamond thin films and mapping transformed zones produced by compressive stress in a bulk sample of phase-stabilized zirconia (PSZ).

Research Organization:
Lawrence Berkeley Lab., CA (United States)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (United States)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
5718896
Report Number(s):
LBL-30462; CONF-910872-9; ON: DE92008304
Resource Relation:
Conference: 25. annual Microbeam Analysis Society meeting, San Jose, CA (United States), 4-9 Aug 1991
Country of Publication:
United States
Language:
English