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Title: Strain and density dependent valence-band masses in InGaAs/GaAs and GaAs/GaAsP strained-layer structures

Conference ·
OSTI ID:5709380

Low-temperature magnetoluminescence measurements have been performed in several n-type InGaAs/GaAs single-strained-quantum-wells with varying internal strain and a n-type GaAs/GaAsP strained-layer-superlattice. Using newly discovered selection rules, an analysis of the data yields simultaneous information about the conduction and valence-band dispersion curves from a single sample. We find that the conduction-bands are parabolic for all of our structures, with effective mass in the range of 0.068 to 0.074m/sub 0/. The valence-bands are found to be nonparabolic and strain dependent. A simple two-band model is used to analyze the nonparabolicity in terms of a zone-center mass m and a parameter C which is expressed in terms of the light-hole and heavy-hole energy difference. From the two-band model, predictions for the valence-band mass as a function of the 2D-carrier concentration can be made. These predictions are found to be in good agreement with recent cyclotron resonance measurements of the mass in p-type samples. 10 refs., 6 figs., 1 tab.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5709380
Report Number(s):
SAND-89-1116C; CONF-8909185-1; ON: DE89016882
Resource Relation:
Conference: 16. symposium on gallium arsenide and related compounds, Karuizawa, Japan, 25-29 Sep 1989; Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English