Radiation evaluation of commercial ferroelectric nonvolatile memories
- Harry Diamond Labs., Adelphi, MD (United States)
- National Semiconductor Corp., Santa Clara, CA (US)
This paper reports on ferroelectric (FE) on complementary metal-oxide semiconductor (CMOS) 4-kbit nonvolatile memories, 8-bit octal latches (with and without FE), and process control test chips that were used to establish a baseline characterization of the radiation response of CMOS/FE integrated devices and to determine whether the additional FE processing caused significant degradation to the baseline CMOS process. Functional failure of all 4-kbit memories and octal latches occurred at total doses of between 2 and 4 krad(Si), most likely due to field- oxide effects in the underlying CMOS. No significant difference was observed between the radiation responses of devices with and without the FE film in this commercial process.
- OSTI ID:
- 5707937
- Report Number(s):
- CONF-910751-; CODEN: IETNA
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 38:6; Conference: Institute of Electrical and Electronic Engineers (IEEE) annual international nuclear and space radiation effects conference, San Diego, CA (United States), 15-19 Jul 1991; ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
MEMORY DEVICES
RADIATION EFFECTS
MOS TRANSISTORS
FAILURES
FERROELECTRIC MATERIALS
FILMS
INTEGRATED CIRCUITS
RESPONSE FUNCTIONS
TESTING
VOLATILITY
ELECTRONIC CIRCUITS
FUNCTIONS
MICROELECTRONIC CIRCUITS
SEMICONDUCTOR DEVICES
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)