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Title: Defect characterization in amorphous silicon based solar cells by subband-gap spectroscopy with constant photocurrent measurements

Abstract

We used the constant photocurrent method to characterize {ital a}-Si:H based {ital pin} cells in order to discuss the correlation between the device characterizing quantity, the fill factor (FF), and the number of defects which is related to the quantity {alpha}{sub {ital D}} (subbandgap optical absorption constant). We show that the changes in the {ital i} layer due to the creation of metastable defects after light soaking or current injection{minus}characterized by {alpha}{sub {ital D}}{minus}directly correlate with the changes in solar cell performance (FF). We are able to show that other reasons than an increased defect density can lead to a reduction of the fill factor. Further we try to quantify {alpha}{sub {ital D}} in terms of a defect density of states.

Authors:
; ; ; ;  [1]
  1. Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, Germany (DD)
Publication Date:
OSTI Identifier:
5705926
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters; (USA)
Additional Journal Information:
Journal Volume: 58:23; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; PERFORMANCE; CRYSTAL DEFECTS; ENERGY GAP; HYDROGENATION; PHOTOCURRENTS; SAMPLE PREPARATION; CHEMICAL REACTIONS; CRYSTAL STRUCTURE; CURRENTS; DIRECT ENERGY CONVERTERS; ELECTRIC CURRENTS; EQUIPMENT; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Frammelsberger, W, Ruebel, H, Lechner, P, Geyer, R, and Kniffler, N. Defect characterization in amorphous silicon based solar cells by subband-gap spectroscopy with constant photocurrent measurements. United States: N. p., 1991. Web. doi:10.1063/1.104799.
Frammelsberger, W, Ruebel, H, Lechner, P, Geyer, R, & Kniffler, N. Defect characterization in amorphous silicon based solar cells by subband-gap spectroscopy with constant photocurrent measurements. United States. doi:10.1063/1.104799.
Frammelsberger, W, Ruebel, H, Lechner, P, Geyer, R, and Kniffler, N. Mon . "Defect characterization in amorphous silicon based solar cells by subband-gap spectroscopy with constant photocurrent measurements". United States. doi:10.1063/1.104799.
@article{osti_5705926,
title = {Defect characterization in amorphous silicon based solar cells by subband-gap spectroscopy with constant photocurrent measurements},
author = {Frammelsberger, W and Ruebel, H and Lechner, P and Geyer, R and Kniffler, N},
abstractNote = {We used the constant photocurrent method to characterize {ital a}-Si:H based {ital pin} cells in order to discuss the correlation between the device characterizing quantity, the fill factor (FF), and the number of defects which is related to the quantity {alpha}{sub {ital D}} (subbandgap optical absorption constant). We show that the changes in the {ital i} layer due to the creation of metastable defects after light soaking or current injection{minus}characterized by {alpha}{sub {ital D}}{minus}directly correlate with the changes in solar cell performance (FF). We are able to show that other reasons than an increased defect density can lead to a reduction of the fill factor. Further we try to quantify {alpha}{sub {ital D}} in terms of a defect density of states.},
doi = {10.1063/1.104799},
journal = {Applied Physics Letters; (USA)},
issn = {0003-6951},
number = ,
volume = 58:23,
place = {United States},
year = {1991},
month = {6}
}