Fabrication of polycrystalline thin films by pulsed laser processing
Patent
·
OSTI ID:570429
A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.
- Research Organization:
- Univ. of California (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Univ. of California, Oakland, CA (United States)
- Patent Number(s):
- US 5,714,404/A/
- Application Number:
- PAN: 8-154,347
- OSTI ID:
- 570429
- Resource Relation:
- Other Information: PBD: 3 Feb 1998
- Country of Publication:
- United States
- Language:
- English
Laser-assisted deposition of thin films from gas-phase and surface-adsorbed molecules
|
journal | September 1989 |
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