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Title: Fe-Zr sputtered thin films for perpendicular magnetic recording media

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.348120· OSTI ID:5694921
; ; ;  [1]
  1. Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan (JP)

Fe-Zr sputtered thin films with large perpendicular magnetic anisotropy were prepared by facing targets sputtering (FTS) apparatus. Perpendicular anisotropy was clearly observed at Zr content around 10 at. %. The substrate temperature {ital T}{sub sub} of {similar to}100 {degree}C resulted in the large perpendicular magnetic anisotropy energy {ital K}{sub {ital u}} of 1.2 {times} 10{sup 6} erg/cc and the high perpendicular coercivity {ital H}{sub {ital c}{perpendicular}} of 1.0 kOe in the Fe-Zr sputtered film with the saturation magnetization 4{pi}{ital M}{sub {ital s}} of 6.7 kG. It was also shown that {ital T}{sub sub} higher than 200 {degree}C caused the decline of {ital K}{sub {ital u}} and the lowering of 4{pi}{ital M}{sub {ital s}}. It is concluded that Fe-Zr sputtered film may be applicable for the media in the perpendicular magnetic recording system.

OSTI ID:
5694921
Journal Information:
Journal of Applied Physics; (USA), Vol. 69:8; ISSN 0021-8979
Country of Publication:
United States
Language:
English