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Title: Epitaxial YBa sub 2 Cu sub 3 O sub x thin films on sapphire using a Y-stabilized ZrO sub 2 buffer layer

Abstract

Epitaxial, {ital c}-oriented YBa{sub 2}Cu{sub 3}O{sub {ital x}} thin films were deposited by dc sputtering on (1{bar 1}02)-sapphire substrates with an intermediate buffer layer of Y-stabilized ZrO{sub 2} (YSZ), which was grown by rf magnetron sputtering. The epitaxy of the YSZ and the YBa{sub 2}Cu{sub 3}O{sub {ital x}} films was proved by Rutherford backscattering spectrometry combined with ion channeling. The YBa{sub 2}Cu{sub 3}O{sub {ital x}} films exhibited transition temperatures of 90 K and had critical current densities exceeding 1.2{times}10{sup 6} A/cm{sup 2} at 77 K in zero magnetic field.

Authors:
; ; ;  [1]; ;  [2]
  1. Siemens AG, Corporate Research and Development, 8000 Muenchen 83, Germany (DE)
  2. Siemens AG, Corporate Research and Development, 8520 Erlangen, Germany (DE)
Publication Date:
OSTI Identifier:
5691481
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters; (USA)
Additional Journal Information:
Journal Volume: 59:2; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BARIUM OXIDES; SPUTTERING; COPPER OXIDES; HIGH-TC SUPERCONDUCTORS; YTTRIUM OXIDES; CRITICAL CURRENT; QUATERNARY COMPOUNDS; SUBSTRATES; SUPERCONDUCTING FILMS; SUPERCONDUCTIVITY; TRANSITION TEMPERATURE; ALKALINE EARTH METAL COMPOUNDS; AMINES; AMMONIUM COMPOUNDS; BARIUM COMPOUNDS; CHALCOGENIDES; COPPER COMPOUNDS; CURRENTS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; FILMS; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SUPERCONDUCTORS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication; 360204 - Ceramics, Cermets, & Refractories- Physical Properties

Citation Formats

Schmidt, H, Hradil, K, Hoesler, W, Wersing, W, Gieres, G, and Seeboeck, R J. Epitaxial YBa sub 2 Cu sub 3 O sub x thin films on sapphire using a Y-stabilized ZrO sub 2 buffer layer. United States: N. p., 1991. Web. doi:10.1063/1.105972.
Schmidt, H, Hradil, K, Hoesler, W, Wersing, W, Gieres, G, & Seeboeck, R J. Epitaxial YBa sub 2 Cu sub 3 O sub x thin films on sapphire using a Y-stabilized ZrO sub 2 buffer layer. United States. https://doi.org/10.1063/1.105972
Schmidt, H, Hradil, K, Hoesler, W, Wersing, W, Gieres, G, and Seeboeck, R J. 1991. "Epitaxial YBa sub 2 Cu sub 3 O sub x thin films on sapphire using a Y-stabilized ZrO sub 2 buffer layer". United States. https://doi.org/10.1063/1.105972.
@article{osti_5691481,
title = {Epitaxial YBa sub 2 Cu sub 3 O sub x thin films on sapphire using a Y-stabilized ZrO sub 2 buffer layer},
author = {Schmidt, H and Hradil, K and Hoesler, W and Wersing, W and Gieres, G and Seeboeck, R J},
abstractNote = {Epitaxial, {ital c}-oriented YBa{sub 2}Cu{sub 3}O{sub {ital x}} thin films were deposited by dc sputtering on (1{bar 1}02)-sapphire substrates with an intermediate buffer layer of Y-stabilized ZrO{sub 2} (YSZ), which was grown by rf magnetron sputtering. The epitaxy of the YSZ and the YBa{sub 2}Cu{sub 3}O{sub {ital x}} films was proved by Rutherford backscattering spectrometry combined with ion channeling. The YBa{sub 2}Cu{sub 3}O{sub {ital x}} films exhibited transition temperatures of 90 K and had critical current densities exceeding 1.2{times}10{sup 6} A/cm{sup 2} at 77 K in zero magnetic field.},
doi = {10.1063/1.105972},
url = {https://www.osti.gov/biblio/5691481}, journal = {Applied Physics Letters; (USA)},
issn = {0003-6951},
number = ,
volume = 59:2,
place = {United States},
year = {Mon Jul 08 00:00:00 EDT 1991},
month = {Mon Jul 08 00:00:00 EDT 1991}
}