Structure and physical properties of polycrystalline hexagonal Ta sub 2 N films deposited by reactive sputtering
- Department of Materials Science, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (USA)
- Extel Corporation, Northbrook, Illinois 60062 (USA)
Hexagonal-structure polycrystalline Ta{sub 2}N films with (21{bar 3}1) preferred orientation were deposited by reactive sputter deposition onto glass substrates in mixed Ar/N{sub 2} atmospheres. Transmission electron microscopy examination of Ta{sub 2}N films grown on BaF{sub 2}(111) using the same deposition conditions showed that the average grain size was {congruent}10 nm. The room-temperature resistivity and temperature coefficient of resistivity of films grown on glass were 2{times}10{sup {minus}4} {Omega} cm and 1.2{times}10{sup {minus}4} K{sup {minus}1}, respectively. The films exhibited relatively low compressive stresses, 1--3{times}10{sup 9} dyn cm{sup {minus}2}, and film/substrate couples photolithographically patterned into thin-film heater elements withstood 2{times}10{sup 7} thermal cycles between {lt}200 and {congruent}850 {degree}C.
- OSTI ID:
- 5690862
- Journal Information:
- Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Vol. 9:4; ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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TANTALUM NITRIDES
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
COMPRESSIBILITY
GRAIN SIZE
HIGH TEMPERATURE
SPUTTERING
TEMPERATURE EFFECTS
THIN FILMS
ELECTRICAL PROPERTIES
FILMS
MECHANICAL PROPERTIES
MICROSTRUCTURE
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORY METAL COMPOUNDS
SIZE
TANTALUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
360202* - Ceramics
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360204 - Ceramics
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