Zn/sub 3/P/sub 2/ as an improved semiconductor for photovoltaic solar cells. Twelfth quarterly report, June 1, 1981-August 31, 1981

Title: Zn/sub 3/P/sub 2/ as an improved semiconductor for photovoltaic solar cells. Twelfth quarterly report, June 1, 1981-August 31, 1981

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Abstract

Al/Zn/sub 3/P/sub 2/ Schottky solar cells were prepared by depositing a thin film of Al on polycrystalline Zn/sub 3/P/sub 2/ wafers by dc sputtering. The cells had J/sub sc/ of 8 to 10 mA/cm/sup 2/ and V/sub oc/ of 0.11 to 0.24 volts. The samples were heated in air at 100/sup 0/C for several hours. The change in spectral response of the cells and Auger depth profiles indicate that Al diffuses in Zn/sub 3/P/sub 2/. The V/sub oc/ and barrier height in these cells decreased after heating. Attempts were made to find an n-type dopant for Zn/sub 3/P/sub 2/. Zn/sub 3/P/sub 2/ wafers were annealed in the presence of In, Al, Ca, As and Na, and the conductivity type remained unchanged. The effect of heat treatment on Mg/Zn/sub 3/P/sub 2/ cells prepared on thin polycrystalline Zn/sub 3/P/sub 2/ films were studied. An n/p junction was formed after heating as evidenced from the change in the cell parameters (V/sub oc/, J/sub 0/) and the spectral response. The junction depth did not follow the time dependence after prolonged heating. It is suspected that a p/sup +/ layer exists near the back contact due to diffusion of Fe in the Zn/sub 3/P/sub 2/more »« less

Publication Date:: Sun Nov 01 00:00:00 EST 1981

Research Org.:: Solar Energy Research Inst., Golden, CO (USA); Delaware Univ., Newark (USA). Inst. of Energy Conversion

OSTI Identifier:: 5690454

Report Number(s):: SERI/PR-8062-1-T13
ON: DE82004259

DOE Contract Number:: AC02-77CH00178

Resource Type:: Technical Report

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; ZINC PHOSPHIDE SOLAR CELLS; FABRICATION; ALUMINIUM; CAPACITANCE; CRYSTAL DOPING; DIFFUSION; EFFICIENCY; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; EPITAXY; FILMS; HEAT TREATMENTS; HETEROJUNCTIONS; IRON; MAGNESIUM; P-N JUNCTIONS; PHOTOCURRENTS; SCHOTTKY BARRIER SOLAR CELLS; SPUTTERING; ZINC SELENIDES; ALKALINE EARTH METALS; CHALCOGENIDES; CURRENTS; DIRECT ENERGY CONVERTERS; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; JUNCTIONS; METALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; SOLAR EQUIPMENT; TRANSITION ELEMENTS; ZINC COMPOUNDS; 140501* - Solar Energy Conversion- Photovoltaic Conversion

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                    . Zn/sub 3/P/sub 2/ as an improved semiconductor for photovoltaic solar cells. Twelfth quarterly report, June 1, 1981-August 31, 1981.  United States: N. p., 1981. 
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                    . Zn/sub 3/P/sub 2/ as an improved semiconductor for photovoltaic solar cells. Twelfth quarterly report, June 1, 1981-August 31, 1981.  United States.

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                    . 1981.  
        "Zn/sub 3/P/sub 2/ as an improved semiconductor for photovoltaic solar cells. Twelfth quarterly report, June 1, 1981-August 31, 1981".  United States.

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@article{osti_5690454,

  title        = {Zn/sub 3/P/sub 2/ as an improved semiconductor for photovoltaic solar cells. Twelfth quarterly report, June 1, 1981-August 31, 1981},

  author       = {},

  abstractNote = {Al/Zn/sub 3/P/sub 2/ Schottky solar cells were prepared by depositing a thin film of Al on polycrystalline Zn/sub 3/P/sub 2/ wafers by dc sputtering. The cells had J/sub sc/ of 8 to 10 mA/cm/sup 2/ and V/sub oc/ of 0.11 to 0.24 volts. The samples were heated in air at 100/sup 0/C for several hours. The change in spectral response of the cells and Auger depth profiles indicate that Al diffuses in Zn/sub 3/P/sub 2/. The V/sub oc/ and barrier height in these cells decreased after heating. Attempts were made to find an n-type dopant for Zn/sub 3/P/sub 2/. Zn/sub 3/P/sub 2/ wafers were annealed in the presence of In, Al, Ca, As and Na, and the conductivity type remained unchanged. The effect of heat treatment on Mg/Zn/sub 3/P/sub 2/ cells prepared on thin polycrystalline Zn/sub 3/P/sub 2/ films were studied. An n/p junction was formed after heating as evidenced from the change in the cell parameters (V/sub oc/, J/sub 0/) and the spectral response. The junction depth did not follow the time dependence after prolonged heating. It is suspected that a p/sup +/ layer exists near the back contact due to diffusion of Fe in the Zn/sub 3/P/sub 2/ thin film during the film growth. The p/p/sup +/ layer gives rise to a Back Surface Field (BSF). Theoretical calculations were performed to show that the light-generated current is higher by 10 to 15% in a BSF cell if the film thickness is comparable to the diffusion length. Thin epitaxial Zn/sub 3/P/sub 2/ films were also grown on Zn/sub 3/P/sub 2/ substrates. Mg/Zn/sub 3/P/sub 2/ cells prepared on these films had total area conversion efficiencies of 2 to 3%. The barrier height of Mg/Zn/sub 3/P/sub 2/ devices were measured to be 1.1 to 1.3 eV. Low resistivity ZnSe films were obtained by co-evaporation with Al in vacuum. ZnSe/Zn/sub 3/P/sub 2/ heterojunction prepared by this method did not exhibit a photovoltaic effect. Epitaxial growth of ZnSe on Zn/sub 3/P/sub 2/ substrates was attempted by close-spaced vapor transport in Argon. ZnSe films were found to contain a significant amount of phosphorus and the devices had no photo response.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/5690454},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Sun Nov 01 00:00:00 EST 1981},

  month        = {Sun Nov 01 00:00:00 EST 1981}

}

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