Vacuum ultraviolet photoelectron spectroscopy of (NH sub 4 ) sub 2 S-treated GaAs (100) surfaces

Journal Article · Mon Aug 28 00:00:00 EDT 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.101780· OSTI ID:5682902

Spindt, C J ^[1]; Liu, D ^[2]; Miyano, K ^[2]; Meissner, P L ^[2]; Chiang, T T ^[2]; Kendelewicz, T ^[2]; Lindau, I ^[2]; Spicer, W E ^[3]

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1. Stanford Electronics Laboratories, Stanford University, Stanford, California 94035 (US)
2. Varian Central Research, Varian Associates, 611 Hansen Way, Palo Alto, California 94303
3. Stanford Electronics Laboratories, Stanford University, Stanford, California 94035

The surface chemistry and band bending of the ammonium sulfide-treated GaAs (100) surface has been studied using surface-sensitive synchrotron radiation photoemission spectroscopy. We find that the treatment leaves the GaAs surface terminated with roughly a monolayer of sulfur bonded to both As and Ga atoms. An {ital n}-type barrier height of 0.8 eV is measured. The thermal stability of the various chemical components is studied and various issues of the passivating mechanism are discussed.

• OSTI ID: 5682902
• Journal Information: Applied Physics Letters; (USA), Vol. 55:9; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
ELECTRONIC STRUCTURE
AMMONIUM COMPOUNDS
CHEMISTRY
LAYERS
PASSIVATION
PHOTOELECTRON SPECTROSCOPY
SULFIDES
SURFACE TREATMENTS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
ELECTRON SPECTROSCOPY
GALLIUM COMPOUNDS
PNICTIDES
SPECTROSCOPY
SULFUR COMPOUNDS
360603* - Materials- Properties