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Title: Synthesis of dilute magnetic semiconductors by ion implantation. [CdMnTe synthesis]

Abstract

We have synthesized layers of CdMnTe by implantation of Mn into CdTe. Samples of CdTe have been implanted with Mn ions of 60 keV energy to fluences in the range 1 x 10/sup 13/ cm/sup -2/ to 2 x 10/sup 16/ cm/sup -2/ resulting in local concentrations of up to 10% at the maximum of the Mn distribution. Rutherford backscattering-channeling analysis has been used to study the radiation damage after implantation and after subsequent rapid thermal annealing (RTA). These experiments reveal that RTA for 15 sec at a temperature T greater than or equal to 700/sup 0/C results in the complete recovery of the lattice order, without affecting the stoichiometry of CdTe. Photoluminescence (PL) measurements of a sample showing complete annealing reveal an increase in the band gap corresponding to the synthesis of very dilute (x approx. = 0.004) Cd/sub 1-x/Mn/sub x/Te. A shift of the excitonic PL peak to lower energies is observed when a magnetic field H less than or equal to 1T is applied. These measurements provide clear evidence for the synthesis of a DMS by ion implantation of Mn into CdTe.

Authors:
; ;
Publication Date:
Research Org.:
Massachusetts Inst. of Tech., Cambridge (USA); Oak Ridge National Lab., TN (USA)
OSTI Identifier:
5659946
Report Number(s):
CONF-8606101-3
ON: DE86013263
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Conference
Resource Relation:
Conference: 5. international conference on ion beam modification of materials, Catania, Italy, 9 Jun 1986
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM TELLURIDES; ION IMPLANTATION; MANGANESE TELLURIDES; PRODUCTION; ANNEALING; BACKSCATTERING; ELECTRONIC STRUCTURE; ION BEAMS; KEV RANGE 10-100; MANGANESE IONS; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; RUTHERFORD SCATTERING; BEAMS; CADMIUM COMPOUNDS; CHALCOGENIDES; CHARGED PARTICLES; ELASTIC SCATTERING; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; LUMINESCENCE; MANGANESE COMPOUNDS; RADIATION EFFECTS; SCATTERING; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; 360605* - Materials- Radiation Effects

Citation Formats

Braunstein, G H, Dresselhaus, G, and Withrow, S P. Synthesis of dilute magnetic semiconductors by ion implantation. [CdMnTe synthesis]. United States: N. p., 1986. Web.
Braunstein, G H, Dresselhaus, G, & Withrow, S P. Synthesis of dilute magnetic semiconductors by ion implantation. [CdMnTe synthesis]. United States.
Braunstein, G H, Dresselhaus, G, and Withrow, S P. Wed . "Synthesis of dilute magnetic semiconductors by ion implantation. [CdMnTe synthesis]". United States.
@article{osti_5659946,
title = {Synthesis of dilute magnetic semiconductors by ion implantation. [CdMnTe synthesis]},
author = {Braunstein, G H and Dresselhaus, G and Withrow, S P},
abstractNote = {We have synthesized layers of CdMnTe by implantation of Mn into CdTe. Samples of CdTe have been implanted with Mn ions of 60 keV energy to fluences in the range 1 x 10/sup 13/ cm/sup -2/ to 2 x 10/sup 16/ cm/sup -2/ resulting in local concentrations of up to 10% at the maximum of the Mn distribution. Rutherford backscattering-channeling analysis has been used to study the radiation damage after implantation and after subsequent rapid thermal annealing (RTA). These experiments reveal that RTA for 15 sec at a temperature T greater than or equal to 700/sup 0/C results in the complete recovery of the lattice order, without affecting the stoichiometry of CdTe. Photoluminescence (PL) measurements of a sample showing complete annealing reveal an increase in the band gap corresponding to the synthesis of very dilute (x approx. = 0.004) Cd/sub 1-x/Mn/sub x/Te. A shift of the excitonic PL peak to lower energies is observed when a magnetic field H less than or equal to 1T is applied. These measurements provide clear evidence for the synthesis of a DMS by ion implantation of Mn into CdTe.},
doi = {},
url = {https://www.osti.gov/biblio/5659946}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {1}
}

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