A carrier escape study from InP/InGaAs single quantum well solar cells

Journal Article · Thu Jan 01 00:00:00 EST 1998 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.366771· OSTI ID:565652

Zachariou, A; Barnes, J; Barnham, K W; Nelson, J; Tsui, E S ^[1]; Epler, J ^[2]; Pate, M ^[3]

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1. Blackett Laboratory, Imperial College of Science, Technology and Medicine, London SW7 2BZ (United Kingdom)
2. Paul Scherrer Institut, CH-8048 Zuerich (Switzerland)
3. EPSRC III--V Facility, University of Sheffield, Sheffield S1 3JD (United Kingdom)

Carrier escape from InP/AlGaAs single quantum well structures is studied by means of simultaneous steady state photocurrent and photoluminescence measurements. The activation energy for escape is measured for the first time in this system. The photoluminescence from the InGaAs wells indicates that a significant number of carriers do not escape at room temperature thus affecting the temperature dependence of the cell. An estimate of the nonradiative efficiency of the device studied is given as a function of bias and temperature. The relevance to new applications is discussed. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 565652
• Journal Information: Journal of Applied Physics, Vol. 83, Issue 2; Other Information: PBD: Jan 1998
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
INDIUM COMPOUNDS
ALUMINIUM COMPOUNDS
SOLAR CELLS
INDIUM PHOSPHIDE SOLAR CELLS
GALLIUM ARSENIDE SOLAR CELLS
CHARGE CARRIERS
HETEROJUNCTIONS
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
RECOMBINATION
EFFICIENCY