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Title: Homoepitaxy of 6H and 4H SiC on nonplanar substrates

Abstract

Growth by vapor phase epitaxy around stripe mesas and in trenches formed by reactive ion etch on 6H and 4H SiC substrates has been investigated. The mesas were aligned with the low index {l_angle}11{bar 2}0{r_angle} and {l_angle}1{bar 1}00{r_angle} directions, as well as with the high index {l_angle}1,1+{radical}(3),{ovr 2+{radical}(3)},0{r_angle} directions, in order to reveal and study the growth habit. It was found that a low C:Si ratio gave a smooth growth and small differences in growth rate between lattice planes. A larger C:Si ratio gave more faceted growth, both limited by surface kinetics and surface diffusion, and the growth rate was 10{percent} lower in the [1{bar 1}00] direction and 10{percent} higher in the [11{bar 2}0] direction, than on the substrate. Growth on mesas oriented parallel to the substrate off-orientation shows clear step-flow growth, while growth on mesas oriented perpendicular to the off-orientation reveals the singular (0001) plane, where islands are observed, which might indicate Stranski{endash}Krastanov growth. {copyright} {ital 1998 American Institute of Physics.}

Authors:
;  [1];  [2]
  1. IMC, Industrial Microelectronics Center, 164 40 Kista (Sweden)
  2. ABB Corporate Research, 164 40 Kista (Sweden)
Publication Date:
OSTI Identifier:
565591
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 72; Journal Issue: 2; Other Information: PBD: Jan 1998
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; VAPOR PHASE EPITAXY; DIFFUSION; GROWTH; P-N JUNCTIONS

Citation Formats

Nordell, N, Karlsson, S, and Konstantinov, A O. Homoepitaxy of 6H and 4H SiC on nonplanar substrates. United States: N. p., 1998. Web. doi:10.1063/1.120683.
Nordell, N, Karlsson, S, & Konstantinov, A O. Homoepitaxy of 6H and 4H SiC on nonplanar substrates. United States. https://doi.org/10.1063/1.120683
Nordell, N, Karlsson, S, and Konstantinov, A O. 1998. "Homoepitaxy of 6H and 4H SiC on nonplanar substrates". United States. https://doi.org/10.1063/1.120683.
@article{osti_565591,
title = {Homoepitaxy of 6H and 4H SiC on nonplanar substrates},
author = {Nordell, N and Karlsson, S and Konstantinov, A O},
abstractNote = {Growth by vapor phase epitaxy around stripe mesas and in trenches formed by reactive ion etch on 6H and 4H SiC substrates has been investigated. The mesas were aligned with the low index {l_angle}11{bar 2}0{r_angle} and {l_angle}1{bar 1}00{r_angle} directions, as well as with the high index {l_angle}1,1+{radical}(3),{ovr 2+{radical}(3)},0{r_angle} directions, in order to reveal and study the growth habit. It was found that a low C:Si ratio gave a smooth growth and small differences in growth rate between lattice planes. A larger C:Si ratio gave more faceted growth, both limited by surface kinetics and surface diffusion, and the growth rate was 10{percent} lower in the [1{bar 1}00] direction and 10{percent} higher in the [11{bar 2}0] direction, than on the substrate. Growth on mesas oriented parallel to the substrate off-orientation shows clear step-flow growth, while growth on mesas oriented perpendicular to the off-orientation reveals the singular (0001) plane, where islands are observed, which might indicate Stranski{endash}Krastanov growth. {copyright} {ital 1998 American Institute of Physics.}},
doi = {10.1063/1.120683},
url = {https://www.osti.gov/biblio/565591}, journal = {Applied Physics Letters},
number = 2,
volume = 72,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 1998},
month = {Thu Jan 01 00:00:00 EST 1998}
}