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Title: High-performance GaInAsSb thermophotovoltaic devices with an AlGaAsSb window

Abstract

A large increase in the quantum efficiency (QE) and open-circuit voltage V{sub oc} of GaInAsSb thermophotovoltaic (TPV) devices is obtained by the use of an AlGaAsSb window layer compared with devices without a window layer. The TPV structure, grown on GaSb substrates by organometallic vapor phase epitaxy or molecular beam epitaxy, consists of a 1-{mu}m-thick n-GaInAsSb base layer, a 3-{mu}m-thick p-GaInAsSb emitter layer, a 100-nm-thick AlGaAsSb window layer, and a 25-nm-thick GaSb contacting layer. The band-gap energy of the lattice-matched GaInAsSb is 0.53{endash}0.55 eV. The peak internal QE of the TPV cells with the window is {gt}90{percent}, compared with less than 60{percent} for those without the window. At a short-circuit current density of {approximately}1000mA/cm{sup 2}, V{sub oc} of {approximately}300meV is obtained for cells with the window layer, compared with less than 220 meV without the window layer. These increases are attributed to a substantial decrease in the surface recombination velocity with the window layer. Based on a standard calculation, the electron diffusion length in the p-GaInAsSb layer is at least 5 {mu}m. {copyright} {ital 1997 American Institute of Physics.}

Authors:
; ; ; ;  [1]; ; ;  [2]
  1. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108 (United States)
  2. Lockheed Martin, Inc., Schenectady, New York 12301-1072 (United States)
Publication Date:
OSTI Identifier:
565535
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 71; Journal Issue: 26; Other Information: PBD: Dec 1997
Country of Publication:
United States
Language:
English
Subject:
66 PHYSICS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; ALUMINIUM COMPOUNDS; SOLAR CELLS; THERMOELECTRICITY; CURRENT DENSITY; CARRIER LIFETIME; THERMOPHOTOVOLTAIC CONVERTERS; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; ANTIMONIDES; QUANTUM EFFICIENCY; WINDOWS; VAPOR PHASE EPITAXY; ENERGY GAP; DIFFUSION LENGTH

Citation Formats

Choi, H K, Wang, C A, Turner, G W, Manfra, M J, Spears, D L, Charache, G W, Danielson, L R, and Depoy, D M. High-performance GaInAsSb thermophotovoltaic devices with an AlGaAsSb window. United States: N. p., 1997. Web. doi:10.1063/1.120497.
Choi, H K, Wang, C A, Turner, G W, Manfra, M J, Spears, D L, Charache, G W, Danielson, L R, & Depoy, D M. High-performance GaInAsSb thermophotovoltaic devices with an AlGaAsSb window. United States. https://doi.org/10.1063/1.120497
Choi, H K, Wang, C A, Turner, G W, Manfra, M J, Spears, D L, Charache, G W, Danielson, L R, and Depoy, D M. Mon . "High-performance GaInAsSb thermophotovoltaic devices with an AlGaAsSb window". United States. https://doi.org/10.1063/1.120497.
@article{osti_565535,
title = {High-performance GaInAsSb thermophotovoltaic devices with an AlGaAsSb window},
author = {Choi, H K and Wang, C A and Turner, G W and Manfra, M J and Spears, D L and Charache, G W and Danielson, L R and Depoy, D M},
abstractNote = {A large increase in the quantum efficiency (QE) and open-circuit voltage V{sub oc} of GaInAsSb thermophotovoltaic (TPV) devices is obtained by the use of an AlGaAsSb window layer compared with devices without a window layer. The TPV structure, grown on GaSb substrates by organometallic vapor phase epitaxy or molecular beam epitaxy, consists of a 1-{mu}m-thick n-GaInAsSb base layer, a 3-{mu}m-thick p-GaInAsSb emitter layer, a 100-nm-thick AlGaAsSb window layer, and a 25-nm-thick GaSb contacting layer. The band-gap energy of the lattice-matched GaInAsSb is 0.53{endash}0.55 eV. The peak internal QE of the TPV cells with the window is {gt}90{percent}, compared with less than 60{percent} for those without the window. At a short-circuit current density of {approximately}1000mA/cm{sup 2}, V{sub oc} of {approximately}300meV is obtained for cells with the window layer, compared with less than 220 meV without the window layer. These increases are attributed to a substantial decrease in the surface recombination velocity with the window layer. Based on a standard calculation, the electron diffusion length in the p-GaInAsSb layer is at least 5 {mu}m. {copyright} {ital 1997 American Institute of Physics.}},
doi = {10.1063/1.120497},
url = {https://www.osti.gov/biblio/565535}, journal = {Applied Physics Letters},
number = 26,
volume = 71,
place = {United States},
year = {1997},
month = {12}
}