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Title: Continuous Czochralski growth: silicon sheet growth development of the large area silicon sheet task of the Low Cost Silicon Solar Array Project. Second annual progress report, October 1-September 30, 1979

Technical Report ·
DOI:https://doi.org/10.2172/5654548· OSTI ID:5654548

The purpose of this program is to demonstrate the growth of at least 100 kilograms of mono crystalline ingot from one crucible by the Czochralski (CZ) method. The approach to the continuous growth process being pursued in this effort relies on conventional CZ technology combined with new equipment designs which allow repeated alternate cycles of crystal growth and hot melt replenishment by methods which are suitable for use in a high volume production facility. A Hamco Model CG2000 crystal grower was modified with a special chamber for the storage of a supply of polycrystalline silicon and a vacuum-tight isolation valve to permit retrieval of crystals and melt replenishment without contamination. A number of additional modifications to the facility have been completed in the program, and the process study phase is now under way, with a number of multi-ingot runs having been performed. It is the purpose of this contract extension to describe a program aimed at a more accurate cost analysis of the continuous growth of silicon into material and also an investigative program for the purpose of defining and solving problems which may hinder the development of continuous Czochralski growth. Progress is reported.

Research Organization:
Kayex Corp., Rochester, NY (USA)
DOE Contract Number:
NAS-7-100-954888
OSTI ID:
5654548
Report Number(s):
DOE/JPL/954888-79/8
Country of Publication:
United States
Language:
English