Low-temperature chemical vapor deposition of tungsten from tungsten hexacarbonyl

Vogt, G J

doi:10.1116/1.571599

Title: Low-temperature chemical vapor deposition of tungsten from tungsten hexacarbonyl

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Abstract

Chemical vapor deposition (CVD) of tungsten from W(CO)/sub 6/ has been investigated below 670 K as an alternate process to WF/sub 6/ CVD for coating glass microspheres. The major advantages of W(CO)/sub 6/ CVD are the elimination of the HF damage to the glass microspheres and potentially a lower deposition temperature for coating DT-filled microspheres. W(CO)/sub 6/ CVD can be utilized, in principle, to coat the microspheres with 1 to 5 ..mu..m of tungsten or to flash coat the microspheres for further coating by WF/sub 6/ CVD. Test coatings were deposited in a fluidized-bed reactor with a hydrogen carrier gas. The coatings were found to contain nearly equal portions of carbon and oxygen, ranging from 16 to 25 at.% for each element. The high carbon and oxygen concentrations are believed to result principally from the physical entrapment of chemisorbed CO molecules at the surface of the growing deposit. The general quality and adhesion of the W(CO)/sub 6/-derived coatings are unsatisfactory at this time for ICF applications.

Authors:: Vogt, G J

Publication Date:: Thu Apr 01 00:00:00 EST 1982

Research Org.:: Los Alamos National Laboratory, Group CMB-6, Mail Stop 770, Los Alamos, New Mexico 87545

OSTI Identifier:: 5648521

DOE Contract Number:: W-7405-ENG-26

Resource Type:: Journal Article

Journal Name:: J. Vac. Sci. Technol.; (United States)

Additional Journal Information:: Journal Volume: 20:4

Country of Publication:: United States

Language:: English

Subject:: 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; GLASS; VAPOR DEPOSITED COATINGS; MICROSPHERES; TUNGSTEN; ADHESION; CHEMICAL VAPOR DEPOSITION; CARBON MONOXIDE; CARBONYL RADICALS; CHEMISORPTION; HIGH TEMPERATURE; HYDROGEN; INERTIAL CONFINEMENT; LASER TARGETS; OXYGEN; TUNGSTEN COMPOUNDS; CARBON COMPOUNDS; CARBON OXIDES; CHALCOGENIDES; CHEMICAL COATING; CHEMICAL REACTIONS; COATINGS; CONFINEMENT; DEPOSITION; ELEMENTS; METALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PLASMA CONFINEMENT; RADICALS; SEPARATION PROCESSES; SORPTION; SURFACE COATING; TARGETS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; 700205* - Fusion Power Plant Technology- Fuel, Heating, & Injection Systems

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                    Vogt, G J. Low-temperature chemical vapor deposition of tungsten from tungsten hexacarbonyl.  United States: N. p., 1982. 
        Web.  doi:10.1116/1.571599.

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                    Vogt, G J. Low-temperature chemical vapor deposition of tungsten from tungsten hexacarbonyl.  United States.  https://doi.org/10.1116/1.571599

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                    Vogt, G J. 1982.  
        "Low-temperature chemical vapor deposition of tungsten from tungsten hexacarbonyl".  United States.  https://doi.org/10.1116/1.571599.

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@article{osti_5648521,

  title        = {Low-temperature chemical vapor deposition of tungsten from tungsten hexacarbonyl},

  author       = {Vogt, G J},

  abstractNote = {Chemical vapor deposition (CVD) of tungsten from W(CO)/sub 6/ has been investigated below 670 K as an alternate process to WF/sub 6/ CVD for coating glass microspheres. The major advantages of W(CO)/sub 6/ CVD are the elimination of the HF damage to the glass microspheres and potentially a lower deposition temperature for coating DT-filled microspheres. W(CO)/sub 6/ CVD can be utilized, in principle, to coat the microspheres with 1 to 5 ..mu..m of tungsten or to flash coat the microspheres for further coating by WF/sub 6/ CVD. Test coatings were deposited in a fluidized-bed reactor with a hydrogen carrier gas. The coatings were found to contain nearly equal portions of carbon and oxygen, ranging from 16 to 25 at.% for each element. The high carbon and oxygen concentrations are believed to result principally from the physical entrapment of chemisorbed CO molecules at the surface of the growing deposit. The general quality and adhesion of the W(CO)/sub 6/-derived coatings are unsatisfactory at this time for ICF applications.},

  doi          = {10.1116/1.571599},

  url          = {https://www.osti.gov/biblio/5648521},
  journal      = {J. Vac. Sci. Technol.; (United States)},
number       = ,

  volume       = 20:4,

  place        = {United States},

  year         = {Thu Apr 01 00:00:00 EST 1982},

  month        = {Thu Apr 01 00:00:00 EST 1982}

}

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