Enhancement of short-circuit current by use of wide bandgap n-layers in p-i-n amorphous silicon photovoltaic cells

Patent · Tue Oct 08 00:00:00 EDT 1991

OSTI ID:5647514

Arya, R R; Catalano, A W

This patent describes a photovoltaic cell. It comprises: a transparent substrate; a transparent front conductive layer formed on the substrate; a p-type layer formed on the front conductive layer; an i-layer of amorphous silicon formed on the p-layer; an n-type sandwich structure of amorphous silicon formed on the i-layer, the n-type sandwich structure including firs, second, and third n-layers successively formed on one another, the first n-layer being formed on the i-layer to form a rectifying junction therewith, the second n-layer being formed on the second n-layer, and the third n-layer being formed on the second n-layer, and the second n-layer having an optical bandgap wider than respective optical bandgaps of the first and third n-type layers and the i-layer; the second n-layer having a thickness at least two times the thickness of each of the first the third n-layers; and a back contact layer of conductive material formed on the third n-layer to form an ohmic contact therewith.

• Assignee: Solarex Corp., Rockville, MD (United States)
• Patent Number(s): US 5055141; A
• Application Number: PPN: US 7-467367
• OSTI ID: 5647514
• Resource Relation: Patent File Date: 19 Jan 1990
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
P-N JUNCTIONS
DESIGN
SILICON SOLAR CELLS
FABRICATION
AMORPHOUS STATE
BACK CONTACT SOLAR CELLS
LAYERS
N-TYPE CONDUCTORS
SEMICONDUCTOR MATERIALS
DIRECT ENERGY CONVERTERS
EQUIPMENT
JUNCTIONS
MATERIALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture