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Title: Development of photoelectrochemical cells based on compound semiconductors and nonaqueous electrolytes. Annual report, May 1-April 30, 1981

Abstract

A high solubility, low light absorption redox couple was developed based on Cu/sup +///sup +2/ chlorides in CH/sub 3/CN. The couple stabilizes n-GaAs against photoanodic dissolution at practical current densities, but not CdSe. Efficiencies for n-GaAs cells were 4 to 5%. p-Zn/sub 3/P/sub 2/ was examined as a photocathode and found to be very unstable with respect to cathodic decomposition yielding PH/sub 3/ in protic media. PECs based on the I/sub 3//sup -//I/sup -/ couple in CH/sub 3/CN resulted in stable regenerative devices for polycrystalline n-GaAs, with 3 to 4% solar conversion efficiency. CdSe and CdTe were about 90% and < 10% stabilized by these electrolytes at photocurrent densities >1 mA/cm/sup 2/. Thin films of CdSe on Ti, formed by a chemical bath deposition process, yielded >5% conversion efficiency in a polysulfide electrolyte under tungsten-halogen illumination. Thin films of CdSe on Ti formed by aqueous electrodeposition also yielded >5% efficiency, but the film homogeneity on performance was very sensitive to reagent concentration and current density. The techniques of laser spot scanning and photocurrent action spectra were modified for evaluation of chemical bath and electrodeposited CdSe photoanodes. Large area, sealed PECs based on both chemical bath and electrodeposited CdSe films havemore » been designed, constructed and tested, and a qualitative assessment made of losses due to the various restructive geometries and counter electrode polarizations. A counter electrode based on Teflon bonded graphite and only 1% CoS/sub 2/ was developed that had excellent polarization characteristics for polysulfide electroreduction. The low concentration of Co may render PECs employing these electrodes less susceptible to photoanode poisoning than when pure CoS counter electrodes are used.« less

Authors:
Publication Date:
Research Org.:
EIC Labs., Inc., Newton, MA (USA)
OSTI Identifier:
5642461
Report Number(s):
SERI/PR-8002-7-T3
ON: DE82009825
DOE Contract Number:  
AC02-77CH00178
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; ELECTRODES; PERFORMANCE TESTING; ELECTROLYTES; PHOTOELECTROCHEMICAL CELLS; CADMIUM SELENIDES; CADMIUM TELLURIDES; CHEMICAL COATING; COPPER CHLORIDES; DESIGN; EFFICIENCY; FILMS; GALLIUM ARSENIDES; IODIDES; MONOCRYSTALS; N-TYPE CONDUCTORS; NONAQUEOUS SOLVENTS; P-TYPE CONDUCTORS; PHOTOANODES; PHOTOCATHODES; PHOTOCURRENTS; POLYCRYSTALS; REDUCTION; STABILIZATION; ZINC PHOSPHIDES; ANODES; ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CATHODES; CHALCOGENIDES; CHEMICAL REACTIONS; CHLORIDES; CHLORINE COMPOUNDS; COPPER COMPOUNDS; COPPER HALIDES; CRYSTALS; CURRENTS; DEPOSITION; ELECTRIC CURRENTS; ELECTROCHEMICAL CELLS; EQUIPMENT; GALLIUM COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; IODINE COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SOLAR EQUIPMENT; SOLVENTS; SURFACE COATING; TELLURIDES; TELLURIUM COMPOUNDS; TESTING; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS; 140505* - Solar Energy Conversion- Photochemical, Photobiological, & Thermochemical Conversion- (1980-)

Citation Formats

Rauh, R D. Development of photoelectrochemical cells based on compound semiconductors and nonaqueous electrolytes. Annual report, May 1-April 30, 1981. United States: N. p., 1982. Web.
Rauh, R D. Development of photoelectrochemical cells based on compound semiconductors and nonaqueous electrolytes. Annual report, May 1-April 30, 1981. United States.
Rauh, R D. Mon . "Development of photoelectrochemical cells based on compound semiconductors and nonaqueous electrolytes. Annual report, May 1-April 30, 1981". United States.
@article{osti_5642461,
title = {Development of photoelectrochemical cells based on compound semiconductors and nonaqueous electrolytes. Annual report, May 1-April 30, 1981},
author = {Rauh, R D},
abstractNote = {A high solubility, low light absorption redox couple was developed based on Cu/sup +///sup +2/ chlorides in CH/sub 3/CN. The couple stabilizes n-GaAs against photoanodic dissolution at practical current densities, but not CdSe. Efficiencies for n-GaAs cells were 4 to 5%. p-Zn/sub 3/P/sub 2/ was examined as a photocathode and found to be very unstable with respect to cathodic decomposition yielding PH/sub 3/ in protic media. PECs based on the I/sub 3//sup -//I/sup -/ couple in CH/sub 3/CN resulted in stable regenerative devices for polycrystalline n-GaAs, with 3 to 4% solar conversion efficiency. CdSe and CdTe were about 90% and < 10% stabilized by these electrolytes at photocurrent densities >1 mA/cm/sup 2/. Thin films of CdSe on Ti, formed by a chemical bath deposition process, yielded >5% conversion efficiency in a polysulfide electrolyte under tungsten-halogen illumination. Thin films of CdSe on Ti formed by aqueous electrodeposition also yielded >5% efficiency, but the film homogeneity on performance was very sensitive to reagent concentration and current density. The techniques of laser spot scanning and photocurrent action spectra were modified for evaluation of chemical bath and electrodeposited CdSe photoanodes. Large area, sealed PECs based on both chemical bath and electrodeposited CdSe films have been designed, constructed and tested, and a qualitative assessment made of losses due to the various restructive geometries and counter electrode polarizations. A counter electrode based on Teflon bonded graphite and only 1% CoS/sub 2/ was developed that had excellent polarization characteristics for polysulfide electroreduction. The low concentration of Co may render PECs employing these electrodes less susceptible to photoanode poisoning than when pure CoS counter electrodes are used.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {2}
}

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