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Title: Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes

Abstract

This patent describes a method of forming an amorphous silicon-containing film on a substrate. The method comprises: the step of decomposing a vapor phase consisting essentially of a fluorohydridodisilane or mixture of fluorohydridodisilanes, wherein the fluorohydridodisilane is represented by the formula Si{sub 2}F{sub {ital x}}H{sub 6{minus}{ital x}} wherein x is an integer from 1 to 5, at a temperature sufficient to cause the thermal decomposition of the fluorohydridodisilane or mixture of fluorohydridodisilanes in a reaction chamber which contains, or is connected to a chamber containing, a substrate which is thermally and chemically stable at the decomposition temperature in the atmosphere of the reaction chamber, whereby the film is formed on the substrate.

Inventors:
;
Publication Date:
OSTI Identifier:
5636099
Patent Number(s):
US 4762808; A
Application Number:
PPN: US 7-064641A
Assignee:
Dow Corning Corp., Midland, TX (USA)
Resource Type:
Patent
Resource Relation:
Patent File Date: 22 Jun 1987
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SEMICONDUCTOR MATERIALS; FILMS; AMORPHOUS STATE; PYROLYSIS; SILANES; SILICON; SUBSTRATES; CHEMICAL REACTIONS; DECOMPOSITION; ELEMENTS; HYDRIDES; HYDROGEN COMPOUNDS; MATERIALS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; THERMOCHEMICAL PROCESSES; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Sharp, K G, and D'Errico, J J. Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes. United States: N. p., 1988. Web.
Sharp, K G, & D'Errico, J J. Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes. United States.
Sharp, K G, and D'Errico, J J. Tue . "Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes". United States.
@article{osti_5636099,
title = {Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes},
author = {Sharp, K G and D'Errico, J J},
abstractNote = {This patent describes a method of forming an amorphous silicon-containing film on a substrate. The method comprises: the step of decomposing a vapor phase consisting essentially of a fluorohydridodisilane or mixture of fluorohydridodisilanes, wherein the fluorohydridodisilane is represented by the formula Si{sub 2}F{sub {ital x}}H{sub 6{minus}{ital x}} wherein x is an integer from 1 to 5, at a temperature sufficient to cause the thermal decomposition of the fluorohydridodisilane or mixture of fluorohydridodisilanes in a reaction chamber which contains, or is connected to a chamber containing, a substrate which is thermally and chemically stable at the decomposition temperature in the atmosphere of the reaction chamber, whereby the film is formed on the substrate.},
doi = {},
url = {https://www.osti.gov/biblio/5636099}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {8}
}