Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes

Title: Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes

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Abstract

This patent describes a method of forming an amorphous silicon-containing film on a substrate. The method comprises: the step of decomposing a vapor phase consisting essentially of a fluorohydridodisilane or mixture of fluorohydridodisilanes, wherein the fluorohydridodisilane is represented by the formula Si{sub 2}F{sub {ital x}}H{sub 6{minus}{ital x}} wherein x is an integer from 1 to 5, at a temperature sufficient to cause the thermal decomposition of the fluorohydridodisilane or mixture of fluorohydridodisilanes in a reaction chamber which contains, or is connected to a chamber containing, a substrate which is thermally and chemically stable at the decomposition temperature in the atmosphere of the reaction chamber, whereby the film is formed on the substrate.

Inventors:: Sharp, K G; D'Errico, J J

Publication Date:: 1988-08-09

OSTI Identifier:: 5636099

Patent Number(s):: US 4762808; A

Application Number:: PPN: US 7-064641A

Assignee:: Dow Corning Corp., Midland, TX (USA)

Resource Type:: Patent

Resource Relation:: Patent File Date: 22 Jun 1987

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; SEMICONDUCTOR MATERIALS; FILMS; AMORPHOUS STATE; PYROLYSIS; SILANES; SILICON; SUBSTRATES; CHEMICAL REACTIONS; DECOMPOSITION; ELEMENTS; HYDRIDES; HYDROGEN COMPOUNDS; MATERIALS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; THERMOCHEMICAL PROCESSES; 360601* - Other Materials- Preparation & Manufacture

Citation Formats


                    Sharp, K G, and D'Errico, J J. Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes.  United States: N. p., 1988. 
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                    Sharp, K G, & D'Errico, J J. Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes.  United States.

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                    Sharp, K G, and D'Errico, J J. Tue .  
        "Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes".  United States.

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@article{osti_5636099,

  title        = {Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes},

  author       = {Sharp, K G and D'Errico, J J},

  abstractNote = {This patent describes a method of forming an amorphous silicon-containing film on a substrate. The method comprises: the step of decomposing a vapor phase consisting essentially of a fluorohydridodisilane or mixture of fluorohydridodisilanes, wherein the fluorohydridodisilane is represented by the formula Si{sub 2}F{sub {ital x}}H{sub 6{minus}{ital x}} wherein x is an integer from 1 to 5, at a temperature sufficient to cause the thermal decomposition of the fluorohydridodisilane or mixture of fluorohydridodisilanes in a reaction chamber which contains, or is connected to a chamber containing, a substrate which is thermally and chemically stable at the decomposition temperature in the atmosphere of the reaction chamber, whereby the film is formed on the substrate.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/5636099},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1988},

  month        = {8}

}

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