Influence of processing in mercury and selenium vapor on the electrical properties of Cd /SUB x/ Hg /SUB 1-x/ Se, Zn /SUB x/ Hg /SUB 1-x/ Se solid solutions

Journal Article · Sun Dec 01 00:00:00 EST 1985 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:5631867

Gavaleshko, N P; Khomyak, V V; Makogonenko, V N; Paranchich, L D; Paranchich, S Y; Tarasyuk, J I

In order to determine the predominant intrinsic point defects in Cd /SUB x/ Hg /SUB 1-x/ Se and Zn /SUB x/ Hg /SUB 1-x/ Se solid solutions, the authors study the influence of annealing in mercury and selenium vapor on the carrier concentration and mobility. When the specimens are annealed in selenium vapor the electron concentration at first increases and then becomes constant. A theoretical analysis of the results obtained indicate that selenium vacancies are the predominant point defects in the solutions, and that the process of defect formation itself is quasiepitaxial.

• Research Organization: Chernovitsy State Univ.
• OSTI ID: 5631867
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Vol. 21:7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM SELENIDES
ANNEALING
POINT DEFECTS
TEMPERATURE EFFECTS
MERCURY
METALLURGICAL EFFECTS
MERCURY SELENIDES
SELENIUM
ZINC SELENIDES
BRIDGMAN METHOD
CARRIER DENSITY
CARRIER MOBILITY
ELECTRON DENSITY
EPITAXY
SOLID SOLUTIONS
TIME DEPENDENCE
VAPORS
CADMIUM COMPOUNDS
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DISPERSIONS
ELEMENTS
FLUIDS
GASES
HEAT TREATMENTS
MERCURY COMPOUNDS
METALS
MIXTURES
MOBILITY
SELENIDES
SELENIUM COMPOUNDS
SEMIMETALS
SOLUTIONS
ZINC COMPOUNDS
360601* - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies