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Title: The influence of target oxygen on the YBa sub 2 Cu sub 3 O sub 6+. delta. direct-current magnetron sputtering process

Abstract

The oxygen partial pressure and the target potential have been monitored under a range of process conditions during single target direct-current (dc) magnetron sputtering of Y--Ba--Cu--O. The introduced sputtering gas consisted in most instances of pure argon and hence the oxygen present in the plasma originated mainly from the target. During the first hours of sputtering the oxygen partial pressure was of the same magnitude as the argon pressure (3.0 Pa) and the film composition was off stoichiometric. During the sputtering the oxygen pressure decreased, the target potential increased and the film composition became more stoichiometric. After 30--40 h of sputtering the target potential and the oxygen pressure stabilized and the film composition was equal to that of the stoichiometric target. If an oxygen flow exceeding a critical level was mixed into the sputtering gas the target potential and the deposition rate decreased swiftly. This was due to target oxidation. In some instances the stabilization after presputtering'' in pure argon was incomplete and oscillations in target voltage and oxygen partial pressure were observed. The fluctuations made it virtually impossible to obtain stoichiometric films. The oscillative behavior of the sputtering process is tentatively explained by a target temperature dependent oxygen diffusion.

Authors:
; ;  [1];  [2]
  1. Thin Film Group, Department of Physics, Linkoeping University, S-581 83 Linkoeping, Sweden (SE)
  2. National Defense Research Establishment, Box 1165, S-581 11 Linkoeping, Sweden (SE)
Publication Date:
OSTI Identifier:
5624580
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)
Additional Journal Information:
Journal Volume: 9:4; Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BARIUM OXIDES; SPUTTERING; COPPER OXIDES; YTTRIUM OXIDES; ELECTRIC POTENTIAL; FILMS; MAGNETRONS; OXYGEN; PARTIAL PRESSURE; STOICHIOMETRY; TARGETS; ALKALINE EARTH METAL COMPOUNDS; BARIUM COMPOUNDS; CHALCOGENIDES; COPPER COMPOUNDS; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NONMETALS; OXIDES; OXYGEN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS; 360200* - Ceramics, Cermets, & Refractories; 656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)

Citation Formats

Larsson, G, Selinder, T I, Helmersson, U, and Rudner, S. The influence of target oxygen on the YBa sub 2 Cu sub 3 O sub 6+. delta. direct-current magnetron sputtering process. United States: N. p., 1991. Web. doi:10.1116/1.577244.
Larsson, G, Selinder, T I, Helmersson, U, & Rudner, S. The influence of target oxygen on the YBa sub 2 Cu sub 3 O sub 6+. delta. direct-current magnetron sputtering process. United States. https://doi.org/10.1116/1.577244
Larsson, G, Selinder, T I, Helmersson, U, and Rudner, S. 1991. "The influence of target oxygen on the YBa sub 2 Cu sub 3 O sub 6+. delta. direct-current magnetron sputtering process". United States. https://doi.org/10.1116/1.577244.
@article{osti_5624580,
title = {The influence of target oxygen on the YBa sub 2 Cu sub 3 O sub 6+. delta. direct-current magnetron sputtering process},
author = {Larsson, G and Selinder, T I and Helmersson, U and Rudner, S},
abstractNote = {The oxygen partial pressure and the target potential have been monitored under a range of process conditions during single target direct-current (dc) magnetron sputtering of Y--Ba--Cu--O. The introduced sputtering gas consisted in most instances of pure argon and hence the oxygen present in the plasma originated mainly from the target. During the first hours of sputtering the oxygen partial pressure was of the same magnitude as the argon pressure (3.0 Pa) and the film composition was off stoichiometric. During the sputtering the oxygen pressure decreased, the target potential increased and the film composition became more stoichiometric. After 30--40 h of sputtering the target potential and the oxygen pressure stabilized and the film composition was equal to that of the stoichiometric target. If an oxygen flow exceeding a critical level was mixed into the sputtering gas the target potential and the deposition rate decreased swiftly. This was due to target oxidation. In some instances the stabilization after presputtering'' in pure argon was incomplete and oscillations in target voltage and oxygen partial pressure were observed. The fluctuations made it virtually impossible to obtain stoichiometric films. The oscillative behavior of the sputtering process is tentatively explained by a target temperature dependent oxygen diffusion.},
doi = {10.1116/1.577244},
url = {https://www.osti.gov/biblio/5624580}, journal = {Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)},
issn = {0734-2101},
number = ,
volume = 9:4,
place = {United States},
year = {Mon Jul 01 00:00:00 EDT 1991},
month = {Mon Jul 01 00:00:00 EDT 1991}
}