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Title: Thin film heterojunction photovoltaic cells and methods of making the same

Abstract

A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of class II B of the periodic table of elements and at least tellurium and then heating said film at a temperature between about 250/sup 0/ C. And 500/sup 0/ C. For a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.

Inventors:
; ;
Publication Date:
OSTI Identifier:
5624397
Patent Number(s):
US 4388483
Assignee:
Monosolar Inc
Resource Type:
Patent
Resource Relation:
Patent File Date: Filed date 8 Sep 1981; Other Information: PAT-APPL-300116
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; PHOTOVOLTAIC CELLS; FABRICATION; HETEROJUNCTIONS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; THIN FILMS; DIRECT ENERGY CONVERTERS; FILMS; JUNCTIONS; MATERIALS; PHOTOELECTRIC CELLS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Basol, B M, Rod, R L, and Tseng, E S. Thin film heterojunction photovoltaic cells and methods of making the same. United States: N. p., 1983. Web.
Basol, B M, Rod, R L, & Tseng, E S. Thin film heterojunction photovoltaic cells and methods of making the same. United States.
Basol, B M, Rod, R L, and Tseng, E S. 1983. "Thin film heterojunction photovoltaic cells and methods of making the same". United States.
@article{osti_5624397,
title = {Thin film heterojunction photovoltaic cells and methods of making the same},
author = {Basol, B M and Rod, R L and Tseng, E S},
abstractNote = {A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of class II B of the periodic table of elements and at least tellurium and then heating said film at a temperature between about 250/sup 0/ C. And 500/sup 0/ C. For a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.},
doi = {},
url = {https://www.osti.gov/biblio/5624397}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 14 00:00:00 EDT 1983},
month = {Tue Jun 14 00:00:00 EDT 1983}
}