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Title: Phonon-assisted recombination and stimulated emission in quantum-well Al/sub x/Ga/sub 1-x/As-GaAs heterostructures

Abstract

Extensive data are presented on various photopumped multiple-quantum-well Al/sub x/Ga/sub 1-x/ As-GaAs heterostructures, grown by metalorganic chemical vapor deposition, showing the variety of laser operation that can be observed one and two phonons below the lowest (n=1, n'=1') confined-particle electron-to-heavy-hole (e..-->..hh, n) and electron-to-light-hole (e..-->..lh, n') recombination transitions. These experiments are performed on small cleaved rectangular samples that, because of two identifiable sets of orthogonal coupled modes, permit unambiguous identification of laser operation on LO-phonon sidebands below the confined-particle transitions. For a small number (two) of closely coupled (approx.50 A) GaAs quantum wells of size L/sub z/ approx.50 A laser operation occurs on multiples of h..omega../sub LO/ from one phonon below transition n=1 (E/sub 1/) to within a phonon or two of the L indirect band edge. Al/sub x/Ga/sub 1-x/ As-GaAs heterostructures with more coupled GaAs quantum wells readily permit observation of laser operation two phonons below the lowest confined-particle transitions. Besides the use of size to reduce carrier scattering to lower energies in a GaAs quantum well, high Zn doping is used to screen and reduce the electron-phonon interaction and thus reduce the carrier scattering to lower energies. The strong phonon participation in the laser operation of these quantum-wellmore » heterostructures, which are not superlattices, demonstrates that the electron-phonon interaction observed in this work is a true two-dimensional effect (and not, e.g., the effect of Brillouin-zone folding). An analysis and arguments are presented justifying this statement and, in addition, leading to the important conclusion that stimulated phonon emission is possible and might play (or likely plays) a role in the quantum-well heterostructures of this work.« less

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
OSTI Identifier:
5619128
Resource Type:
Journal Article
Journal Name:
J. Appl. Phys.; (United States)
Additional Journal Information:
Journal Volume: 51:3
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; CRYSTAL STRUCTURE; ALUMINIUM ARSENIDES; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DATA; ELECTRONS; GALLIUM ARSENIDES; HOLES; OSCILLATION MODES; PHONONS; QUANTUM MECHANICS; RECOMBINATION; STIMULATED EMISSION; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; DEPOSITION; ELEMENTARY PARTICLES; EMISSION; ENERGY-LEVEL TRANSITIONS; FERMIONS; GALLIUM COMPOUNDS; INFORMATION; LASERS; LEPTONS; MECHANICS; PNICTIDES; QUASI PARTICLES; SEMICONDUCTOR DEVICES; SURFACE COATING; 420300* - Engineering- Lasers- (-1989)

Citation Formats

Holonyak, N Jr, Kolbas, R M, Laidig, W D, Vojak, B A, Hess, K, Dupuis, R D, and Dapkus, P D. Phonon-assisted recombination and stimulated emission in quantum-well Al/sub x/Ga/sub 1-x/As-GaAs heterostructures. United States: N. p., 1980. Web. doi:10.1063/1.327818.
Holonyak, N Jr, Kolbas, R M, Laidig, W D, Vojak, B A, Hess, K, Dupuis, R D, & Dapkus, P D. Phonon-assisted recombination and stimulated emission in quantum-well Al/sub x/Ga/sub 1-x/As-GaAs heterostructures. United States. doi:10.1063/1.327818.
Holonyak, N Jr, Kolbas, R M, Laidig, W D, Vojak, B A, Hess, K, Dupuis, R D, and Dapkus, P D. Sat . "Phonon-assisted recombination and stimulated emission in quantum-well Al/sub x/Ga/sub 1-x/As-GaAs heterostructures". United States. doi:10.1063/1.327818.
@article{osti_5619128,
title = {Phonon-assisted recombination and stimulated emission in quantum-well Al/sub x/Ga/sub 1-x/As-GaAs heterostructures},
author = {Holonyak, N Jr and Kolbas, R M and Laidig, W D and Vojak, B A and Hess, K and Dupuis, R D and Dapkus, P D},
abstractNote = {Extensive data are presented on various photopumped multiple-quantum-well Al/sub x/Ga/sub 1-x/ As-GaAs heterostructures, grown by metalorganic chemical vapor deposition, showing the variety of laser operation that can be observed one and two phonons below the lowest (n=1, n'=1') confined-particle electron-to-heavy-hole (e..-->..hh, n) and electron-to-light-hole (e..-->..lh, n') recombination transitions. These experiments are performed on small cleaved rectangular samples that, because of two identifiable sets of orthogonal coupled modes, permit unambiguous identification of laser operation on LO-phonon sidebands below the confined-particle transitions. For a small number (two) of closely coupled (approx.50 A) GaAs quantum wells of size L/sub z/ approx.50 A laser operation occurs on multiples of h..omega../sub LO/ from one phonon below transition n=1 (E/sub 1/) to within a phonon or two of the L indirect band edge. Al/sub x/Ga/sub 1-x/ As-GaAs heterostructures with more coupled GaAs quantum wells readily permit observation of laser operation two phonons below the lowest confined-particle transitions. Besides the use of size to reduce carrier scattering to lower energies in a GaAs quantum well, high Zn doping is used to screen and reduce the electron-phonon interaction and thus reduce the carrier scattering to lower energies. The strong phonon participation in the laser operation of these quantum-well heterostructures, which are not superlattices, demonstrates that the electron-phonon interaction observed in this work is a true two-dimensional effect (and not, e.g., the effect of Brillouin-zone folding). An analysis and arguments are presented justifying this statement and, in addition, leading to the important conclusion that stimulated phonon emission is possible and might play (or likely plays) a role in the quantum-well heterostructures of this work.},
doi = {10.1063/1.327818},
journal = {J. Appl. Phys.; (United States)},
number = ,
volume = 51:3,
place = {United States},
year = {1980},
month = {3}
}