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Title: Application of laser annealing and laser-induced diffusion to photovoltaic conversion

Abstract

High efficiency silicon solar cells can be fabricated by ion implantation followed by pulsed laser annealing. The proper choice of implantation parameters (energy and dose), laser energy density, substrate temperature, etc., and the improvement of the minority carrier diffusion length of the starting material are important factors in obtaining high efficiency cells. Recently, it has been shown that substrate heating during pulsed laser annealing can improve the electrical properties of the emitter regions of solar cells. It has also been found that the open circuit voltage and the fill factor of ion-implanted, laser-annealed cells can be improved by increasing the emitter dopant concentration, whereas the short circuit current remains fairly constant; these results are in only qualitative agreement with theoretical predictions. By using ion implantation followed by laser annealing to form p-n junctions, laser damage gettering to enhance the minority carrier diffusion length, and laser-induced diffusion for incorporating back surface fields, single crystal Si solar cells with efficiencies of over 16% AMI have been obtained. Similar methods are now being applied in the fabrication of polycrystalline cells from Wacker and small-grained (50 ..mu..m) thin-film material. The rationale for these studies and the results obtained to date will be discussed.

Authors:
; ;
Publication Date:
Research Org.:
Oak Ridge National Lab., TN (USA)
OSTI Identifier:
5618923
Report Number(s):
CONF-811224-1
ON: DE82006792
DOE Contract Number:  
W-7405-ENG-26
Resource Type:
Conference
Resource Relation:
Conference: SERI polycrystalline silicon solar cells topical review on high efficiency, Washington, DC, USA, 10 Dec 1981
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; ANNEALING; FABRICATION; ION IMPLANTATION; CARRIER DENSITY; CHARGE CARRIERS; CRYSTAL DOPING; DIFFUSION; DIFFUSION LENGTH; EFFICIENCY; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FILL FACTORS; GETTERING; LASER-RADIATION HEATING; MONOCRYSTALS; P-N JUNCTIONS; POLYCRYSTALS; SPECTRAL RESPONSE; CRYSTALS; CURRENTS; DIMENSIONS; DIRECT ENERGY CONVERTERS; ELECTRICAL PROPERTIES; EQUIPMENT; HEAT TREATMENTS; HEATING; JUNCTIONS; LENGTH; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; PLASMA HEATING; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Young, R T, van der Leeden, G A, and Wood, R F. Application of laser annealing and laser-induced diffusion to photovoltaic conversion. United States: N. p., 1981. Web.
Young, R T, van der Leeden, G A, & Wood, R F. Application of laser annealing and laser-induced diffusion to photovoltaic conversion. United States.
Young, R T, van der Leeden, G A, and Wood, R F. 1981. "Application of laser annealing and laser-induced diffusion to photovoltaic conversion". United States.
@article{osti_5618923,
title = {Application of laser annealing and laser-induced diffusion to photovoltaic conversion},
author = {Young, R T and van der Leeden, G A and Wood, R F},
abstractNote = {High efficiency silicon solar cells can be fabricated by ion implantation followed by pulsed laser annealing. The proper choice of implantation parameters (energy and dose), laser energy density, substrate temperature, etc., and the improvement of the minority carrier diffusion length of the starting material are important factors in obtaining high efficiency cells. Recently, it has been shown that substrate heating during pulsed laser annealing can improve the electrical properties of the emitter regions of solar cells. It has also been found that the open circuit voltage and the fill factor of ion-implanted, laser-annealed cells can be improved by increasing the emitter dopant concentration, whereas the short circuit current remains fairly constant; these results are in only qualitative agreement with theoretical predictions. By using ion implantation followed by laser annealing to form p-n junctions, laser damage gettering to enhance the minority carrier diffusion length, and laser-induced diffusion for incorporating back surface fields, single crystal Si solar cells with efficiencies of over 16% AMI have been obtained. Similar methods are now being applied in the fabrication of polycrystalline cells from Wacker and small-grained (50 ..mu..m) thin-film material. The rationale for these studies and the results obtained to date will be discussed.},
doi = {},
url = {https://www.osti.gov/biblio/5618923}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1981},
month = {12}
}

Conference:
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