Hole-capture properties of the electron-irradiation-induced deep-level H sub 5 in p -type InP: A charge-controlled bistable model

Journal Article · Tue Aug 15 00:00:00 EDT 1989 · Physical Review (Section) B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.40.3749· OSTI ID:5613450

Bretagnon, T; Bastide, G; Rouzeyre, M ^[1]

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1. Groupe d'Etudes des Semiconducteurs, U.S.T.L., place E. Bataillon, 34060 Montpellier CEDEX, France (FR)

The electron-induced irradiated defect {ital H}{sub 5} in Zn-doped {ital p}-type InP is an unusual hole trap, since its temperature-independent weak-hole capture cross section, {sigma}{sub {ital c}}{similar to}10{sup {minus}21} cm{sup 2}, is 6 orders of magnitude lower than the value obtained from thermal-emission rates. We present a charge-controlled bistable configuration-coordinate diagram that explains this large difference and accounts for the optical-absorption properties. In addition, a microscopic {ital D}{sub In}{sup {ital n}+}-Zn{sup {minus}} defect, made by pairing under electrostatic attraction of the ionized acceptor Zn{sup {minus}} and of a positively charged primitive defect {ital D}{sub In}{sup {ital n}+} of the In sublattice, is tentatively proposed as a plausible complex at the origin of {ital H}{sub 5}.

• OSTI ID: 5613450
• Journal Information: Physical Review (Section) B: Condensed Matter; (USA), Vol. 40:6; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM PHOSPHIDES
PHYSICAL RADIATION EFFECTS
CRYSTAL DEFECTS
ELECTRON COLLISIONS
EXPERIMENTAL DATA
HOLES
OPTICAL PROPERTIES
P-TYPE CONDUCTORS
TRAPPING
COLLISIONS
CRYSTAL STRUCTURE
DATA
INDIUM COMPOUNDS
INFORMATION
MATERIALS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
360605* - Materials- Radiation Effects