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Title: Wafer-scale laser pantography: Fabrication of n-metal-oxide-semiconductor transistors and small-scale integrated circuits by direct-write laser-induced pyrolytic reactions

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.94191· OSTI ID:5610923

A complete set of processes sufficient for manufacture of n-metal-oxide-semiconductor (n-MOS) transistors by a laser-induced direct-write process has been demonstrated separately, and integrated to yield functional transistors. Gates and interconnects were fabricated of various combinations of n-doped and intrinsic polysilicon, tungsten, and tungsten silicide compounds. Both 0.1-..mu..m and 1-..mu..m-thick gate oxides were micromachined with and without etchant gas, and the exposed p-Si (100) substrate was cleaned and, at times, etched. Diffusion regions were doped by laser-induced pyrolytic decomposition of phosphine followed by laser annealing. Along with the successful manufacture of working n-MOS transistors and a set of elementary digital logic gates, this letter reports the successful use of several laser-induced surface reactions that have not been reported previously.

Research Organization:
Department of Physics, University of California, Lawrence Livermore National Laboratory, Livermore, California 94550
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
5610923
Journal Information:
Appl. Phys. Lett.; (United States), Vol. 43:10
Country of Publication:
United States
Language:
English