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Title: Wafer-scale laser pantography: Fabrication of n-metal-oxide-semiconductor transistors and small-scale integrated circuits by direct-write laser-induced pyrolytic reactions

Abstract

A complete set of processes sufficient for manufacture of n-metal-oxide-semiconductor (n-MOS) transistors by a laser-induced direct-write process has been demonstrated separately, and integrated to yield functional transistors. Gates and interconnects were fabricated of various combinations of n-doped and intrinsic polysilicon, tungsten, and tungsten silicide compounds. Both 0.1-..mu..m and 1-..mu..m-thick gate oxides were micromachined with and without etchant gas, and the exposed p-Si (100) substrate was cleaned and, at times, etched. Diffusion regions were doped by laser-induced pyrolytic decomposition of phosphine followed by laser annealing. Along with the successful manufacture of working n-MOS transistors and a set of elementary digital logic gates, this letter reports the successful use of several laser-induced surface reactions that have not been reported previously.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Department of Physics, University of California, Lawrence Livermore National Laboratory, Livermore, California 94550
OSTI Identifier:
5610923
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Journal Article
Journal Name:
Appl. Phys. Lett.; (United States)
Additional Journal Information:
Journal Volume: 43:10
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; INTEGRATED CIRCUITS; FABRICATION; LASER RADIATION; USES; MOS TRANSISTORS; N-TYPE CONDUCTORS; PYROLYSIS; CHEMICAL REACTIONS; DECOMPOSITION; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; MATERIALS; MICROELECTRONIC CIRCUITS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; THERMOCHEMICAL PROCESSES; TRANSISTORS; 420800* - Engineering- Electronic Circuits & Devices- (-1989); 360601 - Other Materials- Preparation & Manufacture; 400500 - Photochemistry

Citation Formats

McWilliams, B M, Herman, I P, Mitlitsky, F, Hyde, R A, and Wood, L L. Wafer-scale laser pantography: Fabrication of n-metal-oxide-semiconductor transistors and small-scale integrated circuits by direct-write laser-induced pyrolytic reactions. United States: N. p., 1983. Web. doi:10.1063/1.94191.
McWilliams, B M, Herman, I P, Mitlitsky, F, Hyde, R A, & Wood, L L. Wafer-scale laser pantography: Fabrication of n-metal-oxide-semiconductor transistors and small-scale integrated circuits by direct-write laser-induced pyrolytic reactions. United States. https://doi.org/10.1063/1.94191
McWilliams, B M, Herman, I P, Mitlitsky, F, Hyde, R A, and Wood, L L. Tue . "Wafer-scale laser pantography: Fabrication of n-metal-oxide-semiconductor transistors and small-scale integrated circuits by direct-write laser-induced pyrolytic reactions". United States. https://doi.org/10.1063/1.94191.
@article{osti_5610923,
title = {Wafer-scale laser pantography: Fabrication of n-metal-oxide-semiconductor transistors and small-scale integrated circuits by direct-write laser-induced pyrolytic reactions},
author = {McWilliams, B M and Herman, I P and Mitlitsky, F and Hyde, R A and Wood, L L},
abstractNote = {A complete set of processes sufficient for manufacture of n-metal-oxide-semiconductor (n-MOS) transistors by a laser-induced direct-write process has been demonstrated separately, and integrated to yield functional transistors. Gates and interconnects were fabricated of various combinations of n-doped and intrinsic polysilicon, tungsten, and tungsten silicide compounds. Both 0.1-..mu..m and 1-..mu..m-thick gate oxides were micromachined with and without etchant gas, and the exposed p-Si (100) substrate was cleaned and, at times, etched. Diffusion regions were doped by laser-induced pyrolytic decomposition of phosphine followed by laser annealing. Along with the successful manufacture of working n-MOS transistors and a set of elementary digital logic gates, this letter reports the successful use of several laser-induced surface reactions that have not been reported previously.},
doi = {10.1063/1.94191},
url = {https://www.osti.gov/biblio/5610923}, journal = {Appl. Phys. Lett.; (United States)},
number = ,
volume = 43:10,
place = {United States},
year = {1983},
month = {11}
}