Wafer-scale laser pantography: Fabrication of n-metal-oxide-semiconductor transistors and small-scale integrated circuits by direct-write laser-induced pyrolytic reactions
A complete set of processes sufficient for manufacture of n-metal-oxide-semiconductor (n-MOS) transistors by a laser-induced direct-write process has been demonstrated separately, and integrated to yield functional transistors. Gates and interconnects were fabricated of various combinations of n-doped and intrinsic polysilicon, tungsten, and tungsten silicide compounds. Both 0.1-..mu..m and 1-..mu..m-thick gate oxides were micromachined with and without etchant gas, and the exposed p-Si (100) substrate was cleaned and, at times, etched. Diffusion regions were doped by laser-induced pyrolytic decomposition of phosphine followed by laser annealing. Along with the successful manufacture of working n-MOS transistors and a set of elementary digital logic gates, this letter reports the successful use of several laser-induced surface reactions that have not been reported previously.
- Research Organization:
- Department of Physics, University of California, Lawrence Livermore National Laboratory, Livermore, California 94550
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 5610923
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 43:10
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
INTEGRATED CIRCUITS
FABRICATION
LASER RADIATION
USES
MOS TRANSISTORS
N-TYPE CONDUCTORS
PYROLYSIS
CHEMICAL REACTIONS
DECOMPOSITION
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
MATERIALS
MICROELECTRONIC CIRCUITS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
THERMOCHEMICAL PROCESSES
TRANSISTORS
420800* - Engineering- Electronic Circuits & Devices- (-1989)
360601 - Other Materials- Preparation & Manufacture
400500 - Photochemistry