Output power and temperature dependence of the linewidth of single-frequency cw (GaAl)As diode lasers

Journal Article · Sat May 15 00:00:00 EDT 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92945· OSTI ID:5610437

Welford, D; Mooradian, A

We report here the observation of a linear dependence of cw single-frequency (GaAl)As diode laser linewidth as a function of reciprocal output power at 77, 195, and 273 K. The observed data are explained in terms of spontaneous emission events and their related refractive index perturbations.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
• OSTI ID: 5610437
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 40:10
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
LINE WIDTHS
ALUMINIUM ARSENIDES
DISTURBANCES
EXPERIMENTAL DATA
FREQUENCY SELECTION
GALLIUM ARSENIDES
LOW TEMPERATURE
MATHEMATICAL MODELS
MEDIUM TEMPERATURE
POWER
REFRACTIVITY
TEMPERATURE DEPENDENCE
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)