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Title: Interface recombination and carrier confinement at a GaAs/Ga/sub x/In/sub 1-x/P double heterojunction studied by picosecond population modulation spectroscopy

Abstract

Sensitive picosecond excite-probe modulation methods have been applied to study electron-hole confinement and interface lifetime in a molecular beam epitaxy (MBE) grown n-type Ga/sub x/In/sub 1-x/P/ GaAs/Ga/sub x/In/sub 1-x/P double heterojunction. Time-varying transmission spectra at 77 K have been examined near the E/sub 0/+..delta../sub 0/ transition in GaAs and near the fundamental edge in Ga/sub x/In/sub 1-x/P (x = 0.47), following the injection of a small electron-hole population. We demonstrate directly the confining efficiency of the structure for electrons and, consistent with other recent evidence, find that the interface recombination velocity in the relatively strain-free heterostructure is reduced to less than 1 x 10/sup 4/ cm/s from the value of 5 x 10/sup 5/ cm/s for a free GaAs surface. The latter has been determined by us directly from time-resolved reflection spectra which suggest further applications of these methods to surface spectroscopy of semiconductors.

Authors:
; ;
Publication Date:
Research Org.:
Division of Engineering, Brown University, Providence, Rhode Island 02912
OSTI Identifier:
5610435
Resource Type:
Journal Article
Journal Name:
Appl. Phys. Lett.; (United States)
Additional Journal Information:
Journal Volume: 40:10
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; EPITAXY; CHARGE CARRIERS; CONFINEMENT; ELECTRONS; EXCITATION; EXPERIMENTAL DATA; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; HETEROJUNCTIONS; HOLES; INDIUM PHOSPHIDES; INTERFACES; LIFETIME; LOW TEMPERATURE; MOLECULAR BEAMS; PROBES; RECOMBINATION; SPECTROSCOPY; TIME DEPENDENCE; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; DATA; ELEMENTARY PARTICLES; ENERGY-LEVEL TRANSITIONS; FERMIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INFORMATION; JUNCTIONS; LASERS; LEPTONS; NUMERICAL DATA; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; 420300* - Engineering- Lasers- (-1989)

Citation Formats

Harris, J H, Sugai, S, and Nurmikko, A V. Interface recombination and carrier confinement at a GaAs/Ga/sub x/In/sub 1-x/P double heterojunction studied by picosecond population modulation spectroscopy. United States: N. p., 1982. Web. doi:10.1063/1.92935.
Harris, J H, Sugai, S, & Nurmikko, A V. Interface recombination and carrier confinement at a GaAs/Ga/sub x/In/sub 1-x/P double heterojunction studied by picosecond population modulation spectroscopy. United States. https://doi.org/10.1063/1.92935
Harris, J H, Sugai, S, and Nurmikko, A V. 1982. "Interface recombination and carrier confinement at a GaAs/Ga/sub x/In/sub 1-x/P double heterojunction studied by picosecond population modulation spectroscopy". United States. https://doi.org/10.1063/1.92935.
@article{osti_5610435,
title = {Interface recombination and carrier confinement at a GaAs/Ga/sub x/In/sub 1-x/P double heterojunction studied by picosecond population modulation spectroscopy},
author = {Harris, J H and Sugai, S and Nurmikko, A V},
abstractNote = {Sensitive picosecond excite-probe modulation methods have been applied to study electron-hole confinement and interface lifetime in a molecular beam epitaxy (MBE) grown n-type Ga/sub x/In/sub 1-x/P/ GaAs/Ga/sub x/In/sub 1-x/P double heterojunction. Time-varying transmission spectra at 77 K have been examined near the E/sub 0/+..delta../sub 0/ transition in GaAs and near the fundamental edge in Ga/sub x/In/sub 1-x/P (x = 0.47), following the injection of a small electron-hole population. We demonstrate directly the confining efficiency of the structure for electrons and, consistent with other recent evidence, find that the interface recombination velocity in the relatively strain-free heterostructure is reduced to less than 1 x 10/sup 4/ cm/s from the value of 5 x 10/sup 5/ cm/s for a free GaAs surface. The latter has been determined by us directly from time-resolved reflection spectra which suggest further applications of these methods to surface spectroscopy of semiconductors.},
doi = {10.1063/1.92935},
url = {https://www.osti.gov/biblio/5610435}, journal = {Appl. Phys. Lett.; (United States)},
number = ,
volume = 40:10,
place = {United States},
year = {Sat May 15 00:00:00 EDT 1982},
month = {Sat May 15 00:00:00 EDT 1982}
}