The ECR-plasma deposition of silicon nitride on a tunnel oxide
Abstract
Gate dielectric-quality silicon nitride films were deposited on a tunnel oxide from an SiH{sub 4}/N{sub 2} gas mixture using an electron cyclotron resonance (ECR) plasma. Electrical characteristics depend not only upon the quality of the nitride film but also upon the state of the interfacial oxide. Quasi-static and 1 MHz capacitance-voltage measurements show that a nitride film deposited at 200{degrees}C on 2 nm thick thermally-grown oxide (tunnel oxide) on an unbiased Si substrate has an interface state density of 1.5 {times} 10{sup 11} /cm{sup 2}-eV. Time-of-flight elastic recoil detection (TOF-ERD) was used to examine the level of mixing between the tunnel oxide and the deposited silicon nitride as a function of bias voltage. TOF-ERD showed that for an applied bias of {minus}350 V (ion energy {approx} 380 eV), the deposition of a 10 nm thick film was completely mixed to form an oxynitride whereas the tunnel oxide remained intact for an unbiased sample. (Interdiffusion resulting from energetic-beam heating was ruled-out as a possibility for the mixing.) 13 refs., 4 figs.
- Authors:
-
- Sandia National Labs., Albuquerque, NM (USA)
- Michigan Univ., Ann Arbor, MI (USA). Dept. of Nuclear Engineering
- Publication Date:
- Research Org.:
- Sandia National Labs., Albuquerque, NM (USA)
- Sponsoring Org.:
- USDOE; USDOE, Washington, DC (USA)
- OSTI Identifier:
- 5606425
- Report Number(s):
- SAND-90-3100C; CONF-910406-25
ON: DE91014665
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Conference
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), Anaheim, CA (USA), 29 Apr - 3 May 1991
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; SILICON NITRIDES; ENERGY BEAM DEPOSITION; ELECTRON CYCLOTRON-RESONANCE; LANGMUIR PROBE; MONTE CARLO METHOD; NITROGEN; SEMICONDUCTOR MATERIALS; SUBSTRATES; TIME-OF-FLIGHT METHOD; CYCLOTRON RESONANCE; DEPOSITION; ELECTRIC PROBES; ELEMENTS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES; PROBES; RESONANCE; SILICON COMPOUNDS; SURFACE COATING; 656003* - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-); 360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication
Citation Formats
Barbour, J C, Stein, H J, and Outten, C A. The ECR-plasma deposition of silicon nitride on a tunnel oxide. United States: N. p., 1991.
Web.
Barbour, J C, Stein, H J, & Outten, C A. The ECR-plasma deposition of silicon nitride on a tunnel oxide. United States.
Barbour, J C, Stein, H J, and Outten, C A. 1991.
"The ECR-plasma deposition of silicon nitride on a tunnel oxide". United States.
@article{osti_5606425,
title = {The ECR-plasma deposition of silicon nitride on a tunnel oxide},
author = {Barbour, J C and Stein, H J and Outten, C A},
abstractNote = {Gate dielectric-quality silicon nitride films were deposited on a tunnel oxide from an SiH{sub 4}/N{sub 2} gas mixture using an electron cyclotron resonance (ECR) plasma. Electrical characteristics depend not only upon the quality of the nitride film but also upon the state of the interfacial oxide. Quasi-static and 1 MHz capacitance-voltage measurements show that a nitride film deposited at 200{degrees}C on 2 nm thick thermally-grown oxide (tunnel oxide) on an unbiased Si substrate has an interface state density of 1.5 {times} 10{sup 11} /cm{sup 2}-eV. Time-of-flight elastic recoil detection (TOF-ERD) was used to examine the level of mixing between the tunnel oxide and the deposited silicon nitride as a function of bias voltage. TOF-ERD showed that for an applied bias of {minus}350 V (ion energy {approx} 380 eV), the deposition of a 10 nm thick film was completely mixed to form an oxynitride whereas the tunnel oxide remained intact for an unbiased sample. (Interdiffusion resulting from energetic-beam heating was ruled-out as a possibility for the mixing.) 13 refs., 4 figs.},
doi = {},
url = {https://www.osti.gov/biblio/5606425},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1991},
month = {Tue Jan 01 00:00:00 EST 1991}
}