Method of preparing high-temperature-stable thin-film resistors

Patent ·

OSTI ID:5605947

Raymond, L S

A method of preparing composite, high-temperature-stable, thin-film resistors by chemical vapor deposition is disclosed. The resistor film of tungsten-silicon is formed from gaseous decomposable compounds of tungsten and silicon. The bulk resistivity of the film can be controlled and reproduced and the temperature coefficient of resistivity can be controlled over a range of values by process parameter variation.

• DOE Contract Number: EY-76-S-02-4081
• Assignee: TIC; ERA-05-018788; EDB-80-048947
• OSTI ID: 5605947
• Country of Publication: United States
• Language: English

Related Subjects

15 GEOTHERMAL ENERGY
RESISTORS
FABRICATION
SILICON
CHEMICAL VAPOR DEPOSITION
TUNGSTEN
ELECTRIC CONDUCTIVITY
ELECTRONIC CIRCUITS
GEOTHERMAL WELLS
HEAT RESISTANT MATERIALS
HIGH TEMPERATURE
WELL LOGGING EQUIPMENT
CHEMICAL COATING
DEPOSITION
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
MATERIALS
METALS
PHYSICAL PROPERTIES
REFRACTORY METALS
SEMIMETALS
SURFACE COATING
TRANSITION ELEMENTS
WELLS
150303* - Geothermal Exploration & Exploration Technology- Exploratory Drilling & Well Logging